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RU2H50S-VB Product details
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Product Introduction
RU2H50S-VB is a high-performance unipolar N-type MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, and it can withstand up to 45A of leakage current, suitable for use in a variety of high-efficiency power management and switching applications. The threshold voltage (Vth) of this MOSFET is 3V, ensuring reliable turn-on at the appropriate gate-source voltage. The on-resistance (RDS(ON)) is 38mΩ at a gate-source voltage of 10V, providing extremely low power consumption, suitable for high efficiency and thermal management in high-performance electronic devices.
RU2H50S-VB is a high-performance unipolar N-type MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, and it can withstand up to 45A of leakage current, suitable for use in a variety of high-efficiency power management and switching applications. The threshold voltage (Vth) of this MOSFET is 3V, ensuring reliable turn-on at the appropriate gate-source voltage. The on-resistance (RDS(ON)) is 38mΩ at a gate-source voltage of 10V, providing extremely low power consumption, suitable for high efficiency and thermal management in high-performance electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RU2H50S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-type
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 38mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 45A
- **Technology**: Trench technology
- **Model**: RU2H50S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-type
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 38mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 45A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
RU2H50S-VB MOSFET is widely used in many fields and modules, including:
1. **Power Management**: In high voltage switch mode power supplies (SMPS) and DC-DC converters, this MOSFET can be used as an efficient switching element, suitable for high efficiency management of power adapters, servers and industrial power supplies.
2. **Motor Drive**: RU2H50S-VB can be used for high power motor control, capable of handling high currents, and widely used in power tools, fans and household appliances, providing powerful driving capabilities.
3. **Automotive Electronics**: This MOSFET is suitable for automotive power management and battery management systems, which can effectively control battery charging and discharging, and ensure the safe and efficient operation of automotive electronic equipment.
4. **Solar Inverter**: RU2H50S-VB can be used as an efficient switch in solar inverters to optimize energy conversion and transmission, improve system efficiency, and is suitable for renewable energy systems.
5. **Audio Amplifier**: In high-fidelity audio amplifiers, this MOSFET can be used as an output stage component, providing low power consumption and high efficiency, improving the quality of audio signals, and is suitable for audio equipment and home theater systems.
Through these application examples, the importance of RU2H50S-VB in modern electronic equipment is demonstrated, especially in applications with strict requirements for high voltage and high reliability.
RU2H50S-VB MOSFET is widely used in many fields and modules, including:
1. **Power Management**: In high voltage switch mode power supplies (SMPS) and DC-DC converters, this MOSFET can be used as an efficient switching element, suitable for high efficiency management of power adapters, servers and industrial power supplies.
2. **Motor Drive**: RU2H50S-VB can be used for high power motor control, capable of handling high currents, and widely used in power tools, fans and household appliances, providing powerful driving capabilities.
3. **Automotive Electronics**: This MOSFET is suitable for automotive power management and battery management systems, which can effectively control battery charging and discharging, and ensure the safe and efficient operation of automotive electronic equipment.
4. **Solar Inverter**: RU2H50S-VB can be used as an efficient switch in solar inverters to optimize energy conversion and transmission, improve system efficiency, and is suitable for renewable energy systems.
5. **Audio Amplifier**: In high-fidelity audio amplifiers, this MOSFET can be used as an output stage component, providing low power consumption and high efficiency, improving the quality of audio signals, and is suitable for audio equipment and home theater systems.
Through these application examples, the importance of RU2H50S-VB in modern electronic equipment is demonstrated, especially in applications with strict requirements for high voltage and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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