中文
English
RU2H50Q-VB Product details
Back to previous pageProduct introduction：
Product Introduction
RU2H50Q-VB is a high-performance TO247 packaged single-tube N-type MOSFET designed for high voltage and high current applications. Its VDS tolerance is up to 200V, making it an excellent performer in the field of power management and switch control. With its low on-resistance (21mΩ@VGS=10V), RU2H50Q-VB is able to provide excellent current transfer efficiency under high load conditions, significantly reducing energy consumption and improving overall system performance.
RU2H50Q-VB is a high-performance TO247 packaged single-tube N-type MOSFET designed for high voltage and high current applications. Its VDS tolerance is up to 200V, making it an excellent performer in the field of power management and switch control. With its low on-resistance (21mΩ@VGS=10V), RU2H50Q-VB is able to provide excellent current transfer efficiency under high load conditions, significantly reducing energy consumption and improving overall system performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Parameter description
- **Package**: TO247
- **Configuration**: Single N-type channel
- **VDS**: 200V
- **VGS**: ±20V
- **Vth**: 4V
- **RDS(ON)**: 21mΩ (VGS=10V)
- **ID**: 96A
- **Technology**: Trench
- **Package**: TO247
- **Configuration**: Single N-type channel
- **VDS**: 200V
- **VGS**: ±20V
- **Vth**: 4V
- **RDS(ON)**: 21mΩ (VGS=10V)
- **ID**: 96A
- **Technology**: Trench
Domain and module applications：
Applications: RU2H50Q-VB is widely used in power management systems, such as DC-DC converters, switching power supplies and inverters, and is suitable for applications requiring high voltage and high current. In industrial automation equipment, this MOSFET is often used in motor drives and power distribution systems to ensure stability and reliability under high loads. In addition, RU2H50Q-VB is also suitable for automotive electronics, renewable energy and high-power electronic devices, providing efficient power control and management solutions. Its superior performance makes it an indispensable key component in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
