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RU2H30S-VB Product details
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Product Introduction
RU2H30S-VB is a high-voltage single N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. The maximum drain-source voltage of this MOSFET can reach 200V, which is suitable for stable operation in high voltage environment. With its on-resistance of 48mΩ@VGS=10V, RU2H30S-VB provides excellent energy efficiency and can reduce energy loss in a variety of applications. Using advanced Trench technology, this MOSFET not only has efficient switching performance, but also maintains excellent electrical characteristics under high load conditions, suitable for a variety of industrial and consumer electronic products.
RU2H30S-VB is a high-voltage single N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. The maximum drain-source voltage of this MOSFET can reach 200V, which is suitable for stable operation in high voltage environment. With its on-resistance of 48mΩ@VGS=10V, RU2H30S-VB provides excellent energy efficiency and can reduce energy loss in a variety of applications. Using advanced Trench technology, this MOSFET not only has efficient switching performance, but also maintains excellent electrical characteristics under high load conditions, suitable for a variety of industrial and consumer electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RU2H30S-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Trench
- **Model**: RU2H30S-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: RU2H30S-VB is widely used in high-efficiency switching power supplies (SMPS) and DC-DC converters, which can effectively manage current at high voltages, reduce energy losses, and improve overall system efficiency.
2. **Electric vehicles**: In the battery management and power systems of electric vehicles, this MOSFET can handle high voltages and high currents, ensure safe and efficient power distribution, and support stable operation of the vehicle.
3. **Industrial equipment**: RU2H30S-VB is suitable for a variety of industrial equipment and control systems, including motor drives and automation equipment, and can provide reliable current control and efficient switching operations.
4. **Consumer electronics**: In high-power consumer electronics such as power adapters and fast charging devices, this MOSFET can efficiently manage power to ensure fast charging and long-term use of the device.
Through these applications, the RU2H30S-VB demonstrates its wide applicability in high-power and high-voltage electronic devices, meeting the stringent efficiency and reliability requirements of the modern market.
1. **Power management**: RU2H30S-VB is widely used in high-efficiency switching power supplies (SMPS) and DC-DC converters, which can effectively manage current at high voltages, reduce energy losses, and improve overall system efficiency.
2. **Electric vehicles**: In the battery management and power systems of electric vehicles, this MOSFET can handle high voltages and high currents, ensure safe and efficient power distribution, and support stable operation of the vehicle.
3. **Industrial equipment**: RU2H30S-VB is suitable for a variety of industrial equipment and control systems, including motor drives and automation equipment, and can provide reliable current control and efficient switching operations.
4. **Consumer electronics**: In high-power consumer electronics such as power adapters and fast charging devices, this MOSFET can efficiently manage power to ensure fast charging and long-term use of the device.
Through these applications, the RU2H30S-VB demonstrates its wide applicability in high-power and high-voltage electronic devices, meeting the stringent efficiency and reliability requirements of the modern market.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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