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RU20120L-VB Product details
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Product Introduction
RU20120L-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. With a maximum drain-source voltage of 20V, this MOSFET is suitable for power management and switching applications that require high conduction efficiency and fast switching response. RU20120L-VB has an extremely low on-resistance (RDS(ON) is 2.5mΩ@VGS=4.5V), which can maintain excellent performance under high current conditions, ensuring high efficiency and thermal management of the system. Combined with Trench technology, this MOSFET is particularly suitable for high-density and compact circuit design.
RU20120L-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. With a maximum drain-source voltage of 20V, this MOSFET is suitable for power management and switching applications that require high conduction efficiency and fast switching response. RU20120L-VB has an extremely low on-resistance (RDS(ON) is 2.5mΩ@VGS=4.5V), which can maintain excellent performance under high current conditions, ensuring high efficiency and thermal management of the system. Combined with Trench technology, this MOSFET is particularly suitable for high-density and compact circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RU20120L-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON)）**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench
- **Model**: RU20120L-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON)）**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The RU20120L-VB is ideal for use in efficient DC-DC converters and switch mode power supplies (SMPS), where its low on-resistance and high current carrying capability make it an excellent choice for power management applications.
2. **Electric Vehicles**: In electric and hybrid vehicles, this MOSFET can be used in battery management and drive systems, ensuring safe and efficient operation under high current conditions.
3. **Industrial Automation**: The RU20120L-VB can be used in motor drives for industrial equipment, providing stable current and efficient switching control, suitable for use in robotics and other automation applications.
4. **Consumer Electronics**: In a variety of consumer electronics products, such as smartphones, tablets, and portable speakers, this MOSFET can effectively manage power, improving the energy efficiency and usage time of the device.
Through these applications, the RU20120L-VB demonstrates its wide applicability in modern high-power electronic devices, meeting the stringent requirements for efficiency and performance in a variety of applications.
1. **Power Management**: The RU20120L-VB is ideal for use in efficient DC-DC converters and switch mode power supplies (SMPS), where its low on-resistance and high current carrying capability make it an excellent choice for power management applications.
2. **Electric Vehicles**: In electric and hybrid vehicles, this MOSFET can be used in battery management and drive systems, ensuring safe and efficient operation under high current conditions.
3. **Industrial Automation**: The RU20120L-VB can be used in motor drives for industrial equipment, providing stable current and efficient switching control, suitable for use in robotics and other automation applications.
4. **Consumer Electronics**: In a variety of consumer electronics products, such as smartphones, tablets, and portable speakers, this MOSFET can effectively manage power, improving the energy efficiency and usage time of the device.
Through these applications, the RU20120L-VB demonstrates its wide applicability in modern high-power electronic devices, meeting the stringent requirements for efficiency and performance in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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