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RU1HE4D-VB Product details
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Product Introduction
RU1HE4D-VB is a high-performance single N-channel MOSFET in SOT223 package, designed for high voltage applications. The device uses advanced Trench technology, has low on-resistance and excellent thermal performance, which enables it to perform well under high load conditions. RU1HE4D-VB is suitable for power management, high-efficiency converters and various electronic devices, meeting the needs of modern circuits for efficiency and reliability.
RU1HE4D-VB is a high-performance single N-channel MOSFET in SOT223 package, designed for high voltage applications. The device uses advanced Trench technology, has low on-resistance and excellent thermal performance, which enables it to perform well under high load conditions. RU1HE4D-VB is suitable for power management, high-efficiency converters and various electronic devices, meeting the needs of modern circuits for efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: RU1HE4D-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Trench
- **Model**: RU1HE4D-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: RU1HE4D-VB is very suitable for switching power supplies (SMPS), which can efficiently convert electrical energy, reduce energy consumption, improve overall energy efficiency, and meet the needs of modern power supply design.
2. **DC-DC converter**: In the DC-DC converter, this MOSFET can be used as a switching element to support high-frequency operation and maintain low conduction loss to ensure stable current output. It is widely used in portable devices and embedded systems.
3. **LED drive**: RU1HE4D-VB can effectively control current in LED drive circuits to achieve high-efficiency LED lighting. It is suitable for home lighting, automotive lighting and commercial lighting systems.
4. **Motor control**: This MOSFET performs well in motor drive applications and can provide precise current control. It is widely used in small motor drives and robotics.
5. **Consumer Electronics**: RU1HE4D-VB can be used in a variety of consumer electronics products, such as battery chargers and mobile devices, to improve power management performance and meet the growing efficiency requirements.
Through these features and applications, RU1HE4D-VB has become a key component in modern electronic design, which can effectively meet the application requirements of high performance and miniaturization.
1. **Power management**: RU1HE4D-VB is very suitable for switching power supplies (SMPS), which can efficiently convert electrical energy, reduce energy consumption, improve overall energy efficiency, and meet the needs of modern power supply design.
2. **DC-DC converter**: In the DC-DC converter, this MOSFET can be used as a switching element to support high-frequency operation and maintain low conduction loss to ensure stable current output. It is widely used in portable devices and embedded systems.
3. **LED drive**: RU1HE4D-VB can effectively control current in LED drive circuits to achieve high-efficiency LED lighting. It is suitable for home lighting, automotive lighting and commercial lighting systems.
4. **Motor control**: This MOSFET performs well in motor drive applications and can provide precise current control. It is widely used in small motor drives and robotics.
5. **Consumer Electronics**: RU1HE4D-VB can be used in a variety of consumer electronics products, such as battery chargers and mobile devices, to improve power management performance and meet the growing efficiency requirements.
Through these features and applications, RU1HE4D-VB has become a key component in modern electronic design, which can effectively meet the application requirements of high performance and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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