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RU1HE3D-VB Product details
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Product Introduction
RU1HE3D-VB is a highly efficient single-tube N-type MOSFET in SOT223 package, designed for high voltage and medium current applications. Its VDS tolerance is up to 100V, making it excellent in a variety of power management and switch control situations. RU1HE3D-VB has a moderate on-resistance (120mΩ@VGS=4.5V and 100mΩ@VGS=10V), which can provide stable current transmission while saving space, suitable for the needs of a variety of compact electronic devices.
RU1HE3D-VB is a highly efficient single-tube N-type MOSFET in SOT223 package, designed for high voltage and medium current applications. Its VDS tolerance is up to 100V, making it excellent in a variety of power management and switch control situations. RU1HE3D-VB has a moderate on-resistance (120mΩ@VGS=4.5V and 100mΩ@VGS=10V), which can provide stable current transmission while saving space, suitable for the needs of a variety of compact electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Parameter description
- **Package**: SOT223
- **Configuration**: Single N-type channel
- **VDS**: 100V
- **VGS**: ±20V
- **Vth**: 1.8V
- **RDS(ON)**: 120mΩ (VGS=4.5V), 100mΩ (VGS=10V)
- **ID**: 5A
- **Technology**: Trench
- **Package**: SOT223
- **Configuration**: Single N-type channel
- **VDS**: 100V
- **VGS**: ±20V
- **Vth**: 1.8V
- **RDS(ON)**: 120mΩ (VGS=4.5V), 100mΩ (VGS=10V)
- **ID**: 5A
- **Technology**: Trench
Domain and module applications：
Applications: RU1HE3D-VB is widely used in power management modules such as DC-DC converters and switching power supplies. Its moderate on-resistance and high voltage tolerance make it perform well in terms of energy efficiency. It is very suitable for power switching and load control in portable devices, smart homes and consumer electronics. In addition, this MOSFET can also be used for power management and signal switching in the field of automotive electronics to ensure stability and reliability under different working conditions. Its small package and excellent performance make it an indispensable component in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
