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RU1HE16L-VB Product details
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Product Introduction
RU1HE16L-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. The maximum drain-source voltage of this MOSFET can reach 100V, suitable for a variety of power management and switching applications. With its low on-resistance (RDS(ON) is 55mΩ@VGS=10V), RU1HE16L-VB can effectively reduce energy loss and improve system efficiency. Using advanced Trench technology, this MOSFET maintains superior electrical performance under high load conditions, suitable for a variety of industrial and consumer electronic devices.
RU1HE16L-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. The maximum drain-source voltage of this MOSFET can reach 100V, suitable for a variety of power management and switching applications. With its low on-resistance (RDS(ON) is 55mΩ@VGS=10V), RU1HE16L-VB can effectively reduce energy loss and improve system efficiency. Using advanced Trench technology, this MOSFET maintains superior electrical performance under high load conditions, suitable for a variety of industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RU1HE16L-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON)）**:
- 57mΩ @ VGS = 4.5V
- 55mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 25A
- **Technology**: Trench
- **Model**: RU1HE16L-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON)）**:
- 57mΩ @ VGS = 4.5V
- 55mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 25A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: RU1HE16L-VB is widely used in switch mode power supplies (SMPS) and DC-DC converters, which can significantly reduce conduction losses and improve system efficiency, and is particularly suitable for high-efficiency power supply design.
2. **Electric vehicles**: In electric vehicles and hybrid vehicles, this MOSFET can be used for battery management and electric drive systems to ensure safe and reliable control of high voltage and current.
3. **Industrial automation**: RU1HE16L-VB performs well in motor drive applications and is suitable for industrial automation equipment and robots, supporting efficient current control and energy conversion.
4. **Consumer electronics**: In smartphones, tablets and other portable devices, this MOSFET can provide efficient power management solutions to ensure long-term use and fast charging of devices.
Through these applications, RU1HE16L-VB demonstrates its wide applicability in a variety of electronic devices, meeting the stringent requirements of the modern market for power and efficiency.
1. **Power management**: RU1HE16L-VB is widely used in switch mode power supplies (SMPS) and DC-DC converters, which can significantly reduce conduction losses and improve system efficiency, and is particularly suitable for high-efficiency power supply design.
2. **Electric vehicles**: In electric vehicles and hybrid vehicles, this MOSFET can be used for battery management and electric drive systems to ensure safe and reliable control of high voltage and current.
3. **Industrial automation**: RU1HE16L-VB performs well in motor drive applications and is suitable for industrial automation equipment and robots, supporting efficient current control and energy conversion.
4. **Consumer electronics**: In smartphones, tablets and other portable devices, this MOSFET can provide efficient power management solutions to ensure long-term use and fast charging of devices.
Through these applications, RU1HE16L-VB demonstrates its wide applicability in a variety of electronic devices, meeting the stringent requirements of the modern market for power and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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