中文
English
RU1H35S-VB Product details
Back to previous pageProduct introduction：
Product Introduction
RU1H35S-VB is a high-performance unipolar N-type MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand a leakage current of up to 70A, suitable for various power management and switching applications. The threshold voltage (Vth) of this MOSFET is 1.8V, ensuring reliable turn-on at a lower gate-source voltage. The on-resistance (RDS(ON)) is 20mΩ (at VGS=10V), providing excellent electrical performance for high-power applications and significantly reducing power consumption.
RU1H35S-VB is a high-performance unipolar N-type MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand a leakage current of up to 70A, suitable for various power management and switching applications. The threshold voltage (Vth) of this MOSFET is 1.8V, ensuring reliable turn-on at a lower gate-source voltage. The on-resistance (RDS(ON)) is 20mΩ (at VGS=10V), providing excellent electrical performance for high-power applications and significantly reducing power consumption.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RU1H35S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-type
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
- **Model**: RU1H35S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-type
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
RU1H35S-VB MOSFET is widely used in many fields and modules, including:
1. **Power Conversion**: In high-efficiency switching power supplies (SMPS) and DC-DC converters, this MOSFET can be used as a switching element to improve system efficiency. It is widely used in computers, network equipment and consumer electronics.
2. **Motor Control**: This MOSFET performs well in motor drive systems and can handle high currents. It is suitable for electric vehicles, industrial equipment and household appliances.
3. **Battery Management System**: RU1H35S-VB can achieve precise current control in the charge and discharge control circuit of lithium batteries, ensuring safe and efficient operation of batteries. It is suitable for power tools and portable devices.
4. **LED Driver**: In LED lighting applications, this MOSFET can be used as a driver to achieve LED brightness adjustment through efficient switching control. It is suitable for commercial and home lighting.
5. **Audio Amplifier**: RU1H35S-VB can also be used as an output stage component of an audio amplifier, supporting high current output, improving the quality of audio signals and amplification efficiency.
Through these application examples, the importance of RU1H35S-VB in modern electronic devices is demonstrated, especially in environments that pursue high power and high efficiency.
RU1H35S-VB MOSFET is widely used in many fields and modules, including:
1. **Power Conversion**: In high-efficiency switching power supplies (SMPS) and DC-DC converters, this MOSFET can be used as a switching element to improve system efficiency. It is widely used in computers, network equipment and consumer electronics.
2. **Motor Control**: This MOSFET performs well in motor drive systems and can handle high currents. It is suitable for electric vehicles, industrial equipment and household appliances.
3. **Battery Management System**: RU1H35S-VB can achieve precise current control in the charge and discharge control circuit of lithium batteries, ensuring safe and efficient operation of batteries. It is suitable for power tools and portable devices.
4. **LED Driver**: In LED lighting applications, this MOSFET can be used as a driver to achieve LED brightness adjustment through efficient switching control. It is suitable for commercial and home lighting.
5. **Audio Amplifier**: RU1H35S-VB can also be used as an output stage component of an audio amplifier, supporting high current output, improving the quality of audio signals and amplification efficiency.
Through these application examples, the importance of RU1H35S-VB in modern electronic devices is demonstrated, especially in environments that pursue high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
