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RU1H35Q-VB TO247 Product details
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Product Introduction
RU1H35Q-VB is a high-efficiency single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a maximum drain-source voltage of 100V, this MOSFET can withstand extreme operating conditions and has a low on-resistance (RDS(ON) of 18mΩ), making it excellent in power management and switching applications. With its advanced Trench technology, RU1H35Q-VB can effectively reduce heat loss and improve system efficiency, making it very suitable for a variety of applications in industrial and consumer electronics.
RU1H35Q-VB is a high-efficiency single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a maximum drain-source voltage of 100V, this MOSFET can withstand extreme operating conditions and has a low on-resistance (RDS(ON) of 18mΩ), making it excellent in power management and switching applications. With its advanced Trench technology, RU1H35Q-VB can effectively reduce heat loss and improve system efficiency, making it very suitable for a variety of applications in industrial and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: RU1H35Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 72A
- **Technology**: Trench
- **Model**: RU1H35Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 72A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: RU1H35Q-VB is widely used in switching power supplies (SMPS) and high-efficiency DC-DC converters. It can significantly reduce conduction losses and improve system efficiency. It is particularly suitable for power supply designs that require high efficiency.
2. **Electric vehicles**: In electric vehicles and hybrid vehicles, this MOSFET can be used for battery management and electric drive systems. It can withstand high voltage and high current to ensure system safety and reliability.
3. **Motor drive**: RU1H35Q-VB can provide efficient switching operations in motor drive applications. It is widely used in industrial automation, robotics, and home appliances, supporting stable current control and energy conversion.
4. **Renewable energy**: In solar inverters and wind power generation systems, this MOSFET can effectively manage and convert electrical energy, improve the energy efficiency of the overall system, and promote the application and development of renewable energy technologies.
Through these applications, RU1H35Q-VB demonstrates its wide applicability in modern high-power electronic devices, meeting the stringent requirements of power, efficiency and safety in a variety of applications.
1. **Power management**: RU1H35Q-VB is widely used in switching power supplies (SMPS) and high-efficiency DC-DC converters. It can significantly reduce conduction losses and improve system efficiency. It is particularly suitable for power supply designs that require high efficiency.
2. **Electric vehicles**: In electric vehicles and hybrid vehicles, this MOSFET can be used for battery management and electric drive systems. It can withstand high voltage and high current to ensure system safety and reliability.
3. **Motor drive**: RU1H35Q-VB can provide efficient switching operations in motor drive applications. It is widely used in industrial automation, robotics, and home appliances, supporting stable current control and energy conversion.
4. **Renewable energy**: In solar inverters and wind power generation systems, this MOSFET can effectively manage and convert electrical energy, improve the energy efficiency of the overall system, and promote the application and development of renewable energy technologies.
Through these applications, RU1H35Q-VB demonstrates its wide applicability in modern high-power electronic devices, meeting the stringent requirements of power, efficiency and safety in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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