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RU1H130Q-VB Product details
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Product Introduction
RU1H130Q-VB is a high-efficiency unipolar N-type MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand up to 150A of leakage current, suitable for demanding power management and switching applications. The threshold voltage (Vth) of this MOSFET is 3V, ensuring reliable turn-on at higher gate-source voltages. The on-resistance (RDS(ON)) is 6mΩ (at VGS=10V), which makes it perform well in high-power applications and significantly reduces power consumption.
RU1H130Q-VB is a high-efficiency unipolar N-type MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand up to 150A of leakage current, suitable for demanding power management and switching applications. The threshold voltage (Vth) of this MOSFET is 3V, ensuring reliable turn-on at higher gate-source voltages. The on-resistance (RDS(ON)) is 6mΩ (at VGS=10V), which makes it perform well in high-power applications and significantly reduces power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: RU1H130Q-VB
- **Package**: TO247
- **Configuration**: Unipolar N-type
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: RU1H130Q-VB
- **Package**: TO247
- **Configuration**: Unipolar N-type
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
RU1H130Q-VB MOSFET is widely used in many fields and modules, including:
1. **Power Conversion**: In high-efficiency switch-mode power supplies (SMPS) and DC-DC converters, this MOSFET can be used as a high-current switching element to improve system efficiency and is suitable for power management of various electronic devices.
2. **Motor Drive**: In motor control systems, RU1H130Q-VB can provide stable high-current output, suitable for applications such as electric vehicles, industrial equipment and household appliances.
3. **Battery Management**: In battery charge and discharge control circuits, this MOSFET can achieve precise current control to ensure safe and efficient charging of lithium batteries, and is widely used in mobile devices and energy storage systems.
4. **Audio Amplifier**: In high-power audio amplifiers, RU1H130Q-VB can be used as an output stage component to handle large currents and improve the quality and performance of audio signals.
5. **Industrial Power**: This MOSFET can be used in high-power industrial power supplies and inverters to support heavy-load operation and improve system reliability and stability.
Through these application examples, the importance of RU1H130Q-VB in modern high-performance electronic devices is demonstrated, especially in areas requiring high power and high efficiency.
RU1H130Q-VB MOSFET is widely used in many fields and modules, including:
1. **Power Conversion**: In high-efficiency switch-mode power supplies (SMPS) and DC-DC converters, this MOSFET can be used as a high-current switching element to improve system efficiency and is suitable for power management of various electronic devices.
2. **Motor Drive**: In motor control systems, RU1H130Q-VB can provide stable high-current output, suitable for applications such as electric vehicles, industrial equipment and household appliances.
3. **Battery Management**: In battery charge and discharge control circuits, this MOSFET can achieve precise current control to ensure safe and efficient charging of lithium batteries, and is widely used in mobile devices and energy storage systems.
4. **Audio Amplifier**: In high-power audio amplifiers, RU1H130Q-VB can be used as an output stage component to handle large currents and improve the quality and performance of audio signals.
5. **Industrial Power**: This MOSFET can be used in high-power industrial power supplies and inverters to support heavy-load operation and improve system reliability and stability.
Through these application examples, the importance of RU1H130Q-VB in modern high-performance electronic devices is demonstrated, especially in areas requiring high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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