Featured Model

Last updated:

RTQ025P02-VB Product details

Product introduction:

Product Introduction
The RTQ025P02-VB is a high-performance unipolar P-type MOSFET in a compact SOT23-6 package designed for low-power applications. Its maximum drain-source voltage (VDS) is -30V, and it can withstand a leakage current of up to -4.8A, making it suitable for a variety of power management scenarios. The threshold voltage (Vth) of this MOSFET is -1.7V, allowing it to be reliably turned on at low gate-source voltages. The on-resistance (RDS(ON)) is 54mΩ and 49mΩ at gate-source voltages of 4.5V and 10V, respectively, which is an excellent performance, effectively reducing power consumption and improving system efficiency.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-P -30V -1.7V -4.8A 49mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-P
Detailed parameter description
- **Model**: RTQ025P02-VB
- **Package**: SOT23-6
- **Configuration**: Unipolar P-type
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology

Domain and module applications:

Applications and Module Examples
RTQ025P02-VB MOSFET is widely used in many fields and modules, including:

1. **Power Management**: In switching power supplies and DC-DC converters, RTQ025P02-VB can be used as an efficient switching element to optimize power efficiency and is suitable for various electronic devices.

2. **Battery Management System**: This MOSFET performs well in the charge and discharge control circuit of lithium batteries, ensuring safe and efficient operation of batteries, and is widely used in mobile devices and portable electronic products.

3. **LED Driver**: In LED lighting applications, this MOSFET can be used as a driver to achieve precise current control and increase the brightness of LEDs, suitable for indoor and outdoor lighting.

4. **Motor Control**: RTQ025P02-VB can be used in motor drive circuits to provide stable current output, suitable for applications such as small motors and fans.

5. **Audio amplifier**: In the audio amplifier circuit, RTQ025P02-VB, as an output stage component, can improve the amplification efficiency of audio signals and improve the sound quality.

Through these application examples, the diverse applications of RTQ025P02-VB in modern electronic devices show its importance, especially in the environment of pursuing high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat