Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X2)-B |
Single-P |
-30V |
|
-1.5V |
-5.1A |
|
|
30mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X2)-B |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X2)-B |
Single-P |
-30V |
|
-1.5V |
-5.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X2)-B |
Single-P |
-30V |
|
-1.5V |
-5.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X2)-B |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: RT1A050ZP-VB
- **Package**: DFN8(3x2)-B
- **Configuration**: Unipolar P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.5V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: -5.1A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
RT1A050ZP-VB is suitable for multiple electronic fields, including:
1. **Power management**: In various DC-DC converters and power adapters, this MOSFET is used for switch control, which can improve conversion efficiency and reduce power consumption.
2. **Load switch**: This device is widely used in load switches of consumer electronics products, which can quickly switch load states and optimize energy consumption performance.
3. **Motor control**: In motor drive circuits, RT1A050ZP-VB can be used as a control switch to achieve precise current management and control, and improve the operating efficiency of the motor.
4. **LED drive**: In LED lighting applications, its low on-resistance characteristics can be used to efficiently drive high-power LEDs, ensure stable light output and reduce energy consumption.
5. **Audio amplifier**: In high-fidelity audio equipment, this MOSFET can be used for signal switch control to improve the quality and overall performance of audio signals.
Through the effective use of these application fields, RT1A050ZP-VB can help designers achieve high-efficiency circuit design and meet the needs of modern electronic products for low power consumption and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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