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RSQ035P03TR-VB Product details
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RSQ035P03TR-VB Product Introduction
RSQ035P03TR-VB is a high-performance P-Channel MOSFET in SOT23-6 package, designed for low voltage and low power applications. Its drain-source voltage (VDS) can reach -30V and can carry a leakage current (ID) of up to -4.8A. This device uses Trench technology, has low on-resistance (RDS(ON)), and provides excellent electrical performance at different gate-source voltages, making it suitable for various power management and switching applications.
RSQ035P03TR-VB is a high-performance P-Channel MOSFET in SOT23-6 package, designed for low voltage and low power applications. Its drain-source voltage (VDS) can reach -30V and can carry a leakage current (ID) of up to -4.8A. This device uses Trench technology, has low on-resistance (RDS(ON)), and provides excellent electrical performance at different gate-source voltages, making it suitable for various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Model**: RSQ035P03TR-VB
- **Package**: SOT23-6
- **Configuration**: Single P-channel
- **VDS** (drain-source voltage): -30V
- **VGS** (gate-source voltage): ±20V
- **Vth** (threshold voltage): -1.7V
- **RDS(ON)** (on-resistance):
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **ID** (leakage current): -4.8A
- **Technology**: Trench
- **Model**: RSQ035P03TR-VB
- **Package**: SOT23-6
- **Configuration**: Single P-channel
- **VDS** (drain-source voltage): -30V
- **VGS** (gate-source voltage): ±20V
- **Vth** (threshold voltage): -1.7V
- **RDS(ON)** (on-resistance):
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **ID** (leakage current): -4.8A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
RSQ035P03TR-VB has a wide range of application potentials in multiple fields and modules:
1. **Power switch**: This P-Channel MOSFET is commonly used in switching power supply circuits. As an efficient switching element, it can provide low-loss switching control in power adapters and chargers to help achieve higher energy efficiency.
2. **Load switch**: In load switching applications, RSQ035P03TR-VB can be used to switch various loads, such as controlling battery power in portable devices to ensure that the device switches quickly between standby and working states.
3. **LED driver**: This device is suitable for LED drive circuits. It can effectively control the on and off of LEDs to ensure stable brightness. It is widely used in indoor lighting, backlight sources and automotive lighting.
4. **Audio amplifier**: In audio equipment, RSQ035P03TR-VB can be used as a signal switch to help control the signal path, improve sound quality and reduce distortion, and is suitable for use in high-fidelity audio systems.
5. **Portable electronics**: In mobile phones, tablets and other portable electronic devices, RSQ035P03TR-VB can be used in power management and battery protection circuits to improve battery efficiency and extend device usage time.
These applications demonstrate the importance of RSQ035P03TR-VB in efficient power electronics design, especially in areas that require high efficiency and low power operation, where it performs particularly well.
RSQ035P03TR-VB has a wide range of application potentials in multiple fields and modules:
1. **Power switch**: This P-Channel MOSFET is commonly used in switching power supply circuits. As an efficient switching element, it can provide low-loss switching control in power adapters and chargers to help achieve higher energy efficiency.
2. **Load switch**: In load switching applications, RSQ035P03TR-VB can be used to switch various loads, such as controlling battery power in portable devices to ensure that the device switches quickly between standby and working states.
3. **LED driver**: This device is suitable for LED drive circuits. It can effectively control the on and off of LEDs to ensure stable brightness. It is widely used in indoor lighting, backlight sources and automotive lighting.
4. **Audio amplifier**: In audio equipment, RSQ035P03TR-VB can be used as a signal switch to help control the signal path, improve sound quality and reduce distortion, and is suitable for use in high-fidelity audio systems.
5. **Portable electronics**: In mobile phones, tablets and other portable electronic devices, RSQ035P03TR-VB can be used in power management and battery protection circuits to improve battery efficiency and extend device usage time.
These applications demonstrate the importance of RSQ035P03TR-VB in efficient power electronics design, especially in areas that require high efficiency and low power operation, where it performs particularly well.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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