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RSQ015N06TR-VB Product details
Back to previous pageProduct introduction：
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RSQ015N06TR-VB is a high-performance single N-channel MOSFET with a compact SOT23-6 package, a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 7A. The device supports a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 35mΩ at VGS=4.5V and 30mΩ at VGS=10V. With the design of Trench technology, RSQ015N06TR-VB provides excellent conductivity and low energy loss in low-voltage applications, suitable for various types of high-efficiency power systems.
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RSQ015N06TR-VB is a high-performance single N-channel MOSFET with a compact SOT23-6 package, a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 7A. The device supports a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 35mΩ at VGS=4.5V and 30mΩ at VGS=10V. With the design of Trench technology, RSQ015N06TR-VB provides excellent conductivity and low energy loss in low-voltage applications, suitable for various types of high-efficiency power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
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- **Model:** RSQ015N06TR-VB
- **Package:** SOT23-6
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 35mΩ（VGS=4.5V）
- 30mΩ（VGS=10V）
- **Maximum leakage current (ID):** 7A
- **Technology:** Trench
**
- **Model:** RSQ015N06TR-VB
- **Package:** SOT23-6
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 35mΩ（VGS=4.5V）
- 30mΩ（VGS=10V）
- **Maximum leakage current (ID):** 7A
- **Technology:** Trench
**
Domain and module applications：
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RSQ015N06TR-VB is widely used in power management, switching power supply (SMPS), LED drive and motor control. Due to its low on-resistance and good thermal performance, this MOSFET is very suitable for high-efficiency DC-DC converters and load switching circuits, which can effectively reduce power consumption and improve the overall energy efficiency of the system. Its compact SOT23-6 package design makes it excellent in space-limited electronic devices (such as portable power supplies, consumer electronics and industrial controls), meeting the needs of modern electronic products for high efficiency and compact design.
RSQ015N06TR-VB is widely used in power management, switching power supply (SMPS), LED drive and motor control. Due to its low on-resistance and good thermal performance, this MOSFET is very suitable for high-efficiency DC-DC converters and load switching circuits, which can effectively reduce power consumption and improve the overall energy efficiency of the system. Its compact SOT23-6 package design makes it excellent in space-limited electronic devices (such as portable power supplies, consumer electronics and industrial controls), meeting the needs of modern electronic products for high efficiency and compact design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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