RSM002P03-VB Product details
Product introduction:
RSM002P03-VB is a high-performance P-channel MOSFET in a SOT723-3 package, designed for low voltage and medium current applications. The drain-source voltage (VDS) of this MOSFET can reach -20V and supports a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is -0.45V, allowing it to work effectively at a lower drive voltage. The on-resistance (RDS(ON)) is 456mΩ at VGS=4.5V and 380mΩ at VGS=10V, and the maximum drain current (ID) is -0.78A. RSM002P03-VB uses Trench technology and has excellent conductivity and thermal properties, making it ideal for low-power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | 380mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P |
- **Model**: RSM002P03-VB
- **Package**: SOT723-3
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.45V
- **On-resistance (RDS(ON))**:
- 456mΩ @ VGS=4.5V
- 380mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -0.78A
- **Technology**: Trench
Domain and module applications:
RSM002P03-VB MOSFET is widely used in many fields and modules:
1. **Power management**: This MOSFET is commonly used in switching power supplies and DC-DC converters. It can effectively control the flow of energy and is suitable for power management of mobile phones, tablets and other portable devices.
2. **Signal switch**: In the switching application of audio and video signals, RSM002P03-VB can be used as an efficient signal switch to ensure high-quality signal transmission.
3. **LED drive**: In LED lighting systems, this MOSFET can efficiently drive LED lamps to ensure stable brightness and improve energy efficiency. It is suitable for home and commercial lighting.
4. **Motor control**: RSM002P03-VB can be used in small motor control circuits to achieve efficient drive and precise control of motors. It is suitable for home appliances and automation equipment.
5. **Portable devices**: Due to its small package and good electrical performance, this MOSFET is suitable for use in mobile devices and other portable electronic products, which can effectively save space and improve energy efficiency.
With its superior electrical characteristics and compact package design, RSM002P03-VB is an ideal choice for modern low-power electronic devices and can meet a variety of application requirements.
Technical support:
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