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RSJ650N10TL-VB Product details
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Product Introduction
RSJ650N10TL-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of up to 100V, suitable for a variety of power management and switching applications. Its gate-source voltage (VGS) can operate in the range of ±20V, ensuring the reliability of the device under a variety of operating conditions. With an extremely low on-resistance RDS(ON) of 4mΩ (at VGS=10V), it performs well in high current applications and can effectively reduce conduction losses. The maximum drain current (ID) reaches 140A, which is suitable for demanding load conditions.
RSJ650N10TL-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of up to 100V, suitable for a variety of power management and switching applications. Its gate-source voltage (VGS) can operate in the range of ±20V, ensuring the reliability of the device under a variety of operating conditions. With an extremely low on-resistance RDS(ON) of 4mΩ (at VGS=10V), it performs well in high current applications and can effectively reduce conduction losses. The maximum drain current (ID) reaches 140A, which is suitable for demanding load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RSJ650N10TL-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 140A
- **Technology**: Trench
- **Model**: RSJ650N10TL-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 140A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management Systems**:
The RSJ650N10TL-VB is suitable for efficient power management systems, including DC-DC converters and AC-DC converters. Its low on-resistance and high current capability enable it to reduce energy losses in power conversion and improve overall efficiency.
2. **Electric Vehicles**:
In motor drives and battery management systems for electric and hybrid vehicles, this MOSFET can be used for high power control, helping to achieve faster current switching and better thermal management, enhancing vehicle performance.
3. **Industrial Equipment**:
This MOSFET can be used in power modules and motor controls in a variety of industrial applications, including inverters, frequency converters, and power distribution units, providing efficient power conversion and control.
4. **Consumer Electronics**:
RSJ650N10TL-VB can be used in high-performance consumer electronic devices, such as game consoles and high-performance computers, supporting fast power switching and stable power supply to meet the high-performance needs of modern electronic products.
With its excellent electrical characteristics and wide applicability, RSJ650N10TL-VB is an ideal choice for implementing efficient power solutions to meet the needs of a variety of high-power applications.
1. **Power Management Systems**:
The RSJ650N10TL-VB is suitable for efficient power management systems, including DC-DC converters and AC-DC converters. Its low on-resistance and high current capability enable it to reduce energy losses in power conversion and improve overall efficiency.
2. **Electric Vehicles**:
In motor drives and battery management systems for electric and hybrid vehicles, this MOSFET can be used for high power control, helping to achieve faster current switching and better thermal management, enhancing vehicle performance.
3. **Industrial Equipment**:
This MOSFET can be used in power modules and motor controls in a variety of industrial applications, including inverters, frequency converters, and power distribution units, providing efficient power conversion and control.
4. **Consumer Electronics**:
RSJ650N10TL-VB can be used in high-performance consumer electronic devices, such as game consoles and high-performance computers, supporting fast power switching and stable power supply to meet the high-performance needs of modern electronic products.
With its excellent electrical characteristics and wide applicability, RSJ650N10TL-VB is an ideal choice for implementing efficient power solutions to meet the needs of a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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