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RSJ250P10TL-VB Product details
Back to previous pageProduct introduction：
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RSJ250P10TL-VB is a high-performance single P-channel MOSFET in TO263 package with -100V drain-source voltage (VDS) and -37A maximum drain current (ID). The device supports ±20V gate-source voltage (VGS) and threshold voltage (Vth) of -2V. The on-resistance (RDS(ON)) is 50mΩ at VGS=4.5V and 40mΩ at VGS=10V. With its Trench technology design, this MOSFET is able to provide excellent performance in high-performance and low-power applications.
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RSJ250P10TL-VB is a high-performance single P-channel MOSFET in TO263 package with -100V drain-source voltage (VDS) and -37A maximum drain current (ID). The device supports ±20V gate-source voltage (VGS) and threshold voltage (Vth) of -2V. The on-resistance (RDS(ON)) is 50mΩ at VGS=4.5V and 40mΩ at VGS=10V. With its Trench technology design, this MOSFET is able to provide excellent performance in high-performance and low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
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- **Model:** RSJ250P10TL-VB
- **Package:** TO263
- **Configuration:** Single P channel
- **Drain-source voltage (VDS):** -100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 50mΩ（VGS=4.5V）
- 40mΩ（VGS=10V）
- **Maximum leakage current (ID):** -37A
- **Technology:** Trench
**
- **Model:** RSJ250P10TL-VB
- **Package:** TO263
- **Configuration:** Single P channel
- **Drain-source voltage (VDS):** -100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 50mΩ（VGS=4.5V）
- 40mΩ（VGS=10V）
- **Maximum leakage current (ID):** -37A
- **Technology:** Trench
**
Domain and module applications：
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RSJ250P10TL-VB is suitable for a variety of applications, including power management, switch mode power supplies (SMPS) and motor drives. Due to its excellent conduction performance and low on-resistance, this MOSFET is very suitable for high-efficiency DC-DC converters and load switching applications. In addition, due to its high withstand voltage characteristics, the device is widely used in high-voltage environments such as battery management systems and inverters. Its TO263 package design also enables it to maintain good heat dissipation in space-constrained circuits, making it suitable for use in consumer electronics, industrial control and automotive electronics.
RSJ250P10TL-VB is suitable for a variety of applications, including power management, switch mode power supplies (SMPS) and motor drives. Due to its excellent conduction performance and low on-resistance, this MOSFET is very suitable for high-efficiency DC-DC converters and load switching applications. In addition, due to its high withstand voltage characteristics, the device is widely used in high-voltage environments such as battery management systems and inverters. Its TO263 package design also enables it to maintain good heat dissipation in space-constrained circuits, making it suitable for use in consumer electronics, industrial control and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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