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RSJ10HN06TL-VB Product details
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Product Introduction
RSJ10HN06TL-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 60V, and it supports a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET is 3V, enabling fast switching at a lower drive voltage. The on-resistance (RDS(ON)) is only 4mΩ at VGS=10V, and the maximum drain current (ID) is up to 150A. This outstanding performance makes the RSJ10HN06TL-VB an ideal choice for high-efficiency power supplies and high-power applications, with Trench technology for excellent thermal management and conductivity.
RSJ10HN06TL-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 60V, and it supports a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET is 3V, enabling fast switching at a lower drive voltage. The on-resistance (RDS(ON)) is only 4mΩ at VGS=10V, and the maximum drain current (ID) is up to 150A. This outstanding performance makes the RSJ10HN06TL-VB an ideal choice for high-efficiency power supplies and high-power applications, with Trench technology for excellent thermal management and conductivity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RSJ10HN06TL-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
- **Model**: RSJ10HN06TL-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
RSJ10HN06TL-VB has a wide range of applications in multiple fields and modules:
1. **Power conversion**: In DC-DC converters and switching power supplies, this MOSFET can efficiently manage power conversion and is widely used in electronic products, servers and industrial equipment.
2. **Motor drive**: In motor control systems, this MOSFET can efficiently control the start, operation and speed regulation of the motor, and is suitable for power tools, electric vehicles and household appliances.
3. **High-frequency switch**: RSJ10HN06TL-VB can be used as a high-frequency switch, suitable for RF applications and signal processing, ensuring high-quality signal transmission.
4. **LED driver power**: In LED lighting and display equipment, this MOSFET can provide stable drive to ensure the brightness and life of LED lamps.
5. **Portable devices**: In mobile and portable electronics, this MOSFET can be used as a load switch to help improve energy efficiency and save space.
With its excellent electrical performance and high current carrying capacity, RSJ10HN06TL-VB shows good applicability in modern high-efficiency electronic devices and can meet a variety of application needs.
RSJ10HN06TL-VB has a wide range of applications in multiple fields and modules:
1. **Power conversion**: In DC-DC converters and switching power supplies, this MOSFET can efficiently manage power conversion and is widely used in electronic products, servers and industrial equipment.
2. **Motor drive**: In motor control systems, this MOSFET can efficiently control the start, operation and speed regulation of the motor, and is suitable for power tools, electric vehicles and household appliances.
3. **High-frequency switch**: RSJ10HN06TL-VB can be used as a high-frequency switch, suitable for RF applications and signal processing, ensuring high-quality signal transmission.
4. **LED driver power**: In LED lighting and display equipment, this MOSFET can provide stable drive to ensure the brightness and life of LED lamps.
5. **Portable devices**: In mobile and portable electronics, this MOSFET can be used as a load switch to help improve energy efficiency and save space.
With its excellent electrical performance and high current carrying capacity, RSJ10HN06TL-VB shows good applicability in modern high-efficiency electronic devices and can meet a variety of application needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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