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RSD200N10-VB Product details
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RSD200N10-VB Product Introduction
RSD200N10-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand a leakage current of up to 40A, making it suitable for various power management and switching applications. The device has an extremely low on-resistance (RDS(ON)) and performs well under different gate-source voltages (VGS), which can effectively reduce energy consumption and improve the overall efficiency of the system. It is widely used in power electronics and consumer electronics.
RSD200N10-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand a leakage current of up to 40A, making it suitable for various power management and switching applications. The device has an extremely low on-resistance (RDS(ON)) and performs well under different gate-source voltages (VGS), which can effectively reduce energy consumption and improve the overall efficiency of the system. It is widely used in power electronics and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RSD200N10-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 100V
- **VGS** (gate-source voltage): ±20V
- **Vth** (threshold voltage): 1.8V
- **RDS(ON)** (on-resistance): 35mΩ @ VGS=4.5V
**RDS(ON)** (on-resistance): 30mΩ @ VGS=10V
- **ID** (leakage current): 40A
- **Technology**: Trench
- **Model**: RSD200N10-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 100V
- **VGS** (gate-source voltage): ±20V
- **Vth** (threshold voltage): 1.8V
- **RDS(ON)** (on-resistance): 35mΩ @ VGS=4.5V
**RDS(ON)** (on-resistance): 30mΩ @ VGS=10V
- **ID** (leakage current): 40A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
RSD200N10-VB is suitable for a variety of medium and high voltage applications, including:
1. **Switching power supply**: RSD200N10-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its high efficiency and low on-resistance can significantly improve energy conversion efficiency and is suitable for various electronic devices such as chargers and power adapters.
2. **Motor drive**: This MOSFET can be used in motor control systems to provide stable switching performance and efficient current control, suitable for electric vehicles, home appliances and industrial automation equipment.
3. **LED drive**: RSD200N10-VB can be used in LED lighting drive circuits to provide stable current output to ensure the brightness and service life of LEDs, suitable for home, commercial lighting and automotive lighting systems.
4. **Power management module**: This device can be integrated into various power management systems to optimize power efficiency and improve system reliability and stability. It is widely used in smartphones, tablets and other portable devices.
5. **Consumer Electronics**: In various consumer electronics products, this MOSFET can be used as a switching element to improve power management efficiency and reduce standby power consumption, making it suitable for smart home devices and wearable devices.
Through these application examples, the RSD200N10-VB shows its importance in modern power electronics design, especially in medium-voltage and high-efficiency systems.
RSD200N10-VB is suitable for a variety of medium and high voltage applications, including:
1. **Switching power supply**: RSD200N10-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its high efficiency and low on-resistance can significantly improve energy conversion efficiency and is suitable for various electronic devices such as chargers and power adapters.
2. **Motor drive**: This MOSFET can be used in motor control systems to provide stable switching performance and efficient current control, suitable for electric vehicles, home appliances and industrial automation equipment.
3. **LED drive**: RSD200N10-VB can be used in LED lighting drive circuits to provide stable current output to ensure the brightness and service life of LEDs, suitable for home, commercial lighting and automotive lighting systems.
4. **Power management module**: This device can be integrated into various power management systems to optimize power efficiency and improve system reliability and stability. It is widely used in smartphones, tablets and other portable devices.
5. **Consumer Electronics**: In various consumer electronics products, this MOSFET can be used as a switching element to improve power management efficiency and reduce standby power consumption, making it suitable for smart home devices and wearable devices.
Through these application examples, the RSD200N10-VB shows its importance in modern power electronics design, especially in medium-voltage and high-efficiency systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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