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RSD200N05-VB Product details
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RSD200N05-VB Product Introduction
RSD200N05-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, suitable for use in a variety of power management and switch control circuits. Its threshold voltage (Vth) is 2.5V, and the on-resistance (RDS(ON)) is 14mΩ at VGS=4.5V and 12mΩ at VGS=10V, ensuring excellent performance in high-efficiency power conversion and suitable for high-load application scenarios.
RSD200N05-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, suitable for use in a variety of power management and switch control circuits. Its threshold voltage (Vth) is 2.5V, and the on-resistance (RDS(ON)) is 14mΩ at VGS=4.5V and 12mΩ at VGS=10V, ensuring excellent performance in high-efficiency power conversion and suitable for high-load application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RSD200N05-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 55A
- **Technology**: Trench technology (Trench)
- **Model**: RSD200N05-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 55A
- **Technology**: Trench technology (Trench)
Domain and module applications：
Applications and modules
The high efficiency and high current capability of RSD200N05-VB make it suitable for multiple applications, including:
1. **Power management system**: This MOSFET can be used as an efficient switching element to achieve excellent switching performance in power management circuits, suitable for portable devices and various battery-powered systems, providing efficient power conversion.
2. **Motor drive**: In motor control applications, RSD200N05-VB can effectively drive DC motors, which are widely used in power tools, electric vehicles and household appliances to ensure their stable and efficient operation.
3. **LED drive**: This device can be used in LED lighting systems to provide efficient and stable current output, thereby improving lighting effects and energy efficiency, and is suitable for commercial and residential lighting solutions.
4. **Load switch**: RSD200N05-VB is suitable for use as a load switch to provide reliable power management for various home appliances and industrial equipment, ensuring the safe and stable operation of the equipment under high current conditions.
Through these applications, RSD200N05-VB can support various power electronic solutions and meet the market demand for low voltage N-channel MOSFET.
The high efficiency and high current capability of RSD200N05-VB make it suitable for multiple applications, including:
1. **Power management system**: This MOSFET can be used as an efficient switching element to achieve excellent switching performance in power management circuits, suitable for portable devices and various battery-powered systems, providing efficient power conversion.
2. **Motor drive**: In motor control applications, RSD200N05-VB can effectively drive DC motors, which are widely used in power tools, electric vehicles and household appliances to ensure their stable and efficient operation.
3. **LED drive**: This device can be used in LED lighting systems to provide efficient and stable current output, thereby improving lighting effects and energy efficiency, and is suitable for commercial and residential lighting solutions.
4. **Load switch**: RSD200N05-VB is suitable for use as a load switch to provide reliable power management for various home appliances and industrial equipment, ensuring the safe and stable operation of the equipment under high current conditions.
Through these applications, RSD200N05-VB can support various power electronic solutions and meet the market demand for low voltage N-channel MOSFET.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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