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RSD131P10-VB Product details
Back to previous pageProduct introduction：
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RSD131P10-VB is a high-efficiency single P-channel MOSFET in TO252 package with -100V drain-source voltage (VDS) and -16A maximum drain current (ID). The device supports ±20V gate-source voltage (VGS) and threshold voltage (Vth) of -2V. The on-resistance (RDS(ON)) is 120mΩ at VGS=4.5V and 100mΩ at VGS=10V. This MOSFET is designed with Trench technology and is suitable for use in high voltage and high efficiency applications.
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RSD131P10-VB is a high-efficiency single P-channel MOSFET in TO252 package with -100V drain-source voltage (VDS) and -16A maximum drain current (ID). The device supports ±20V gate-source voltage (VGS) and threshold voltage (Vth) of -2V. The on-resistance (RDS(ON)) is 120mΩ at VGS=4.5V and 100mΩ at VGS=10V. This MOSFET is designed with Trench technology and is suitable for use in high voltage and high efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
：**
- **Model:** RSD131P10-VB
- **Package:** TO252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 120mΩ（VGS=4.5V）
- 100mΩ（VGS=10V）
- **Maximum leakage current (ID):** -16A
- **Technology:** Trench
**
- **Model:** RSD131P10-VB
- **Package:** TO252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 120mΩ（VGS=4.5V）
- 100mΩ（VGS=10V）
- **Maximum leakage current (ID):** -16A
- **Technology:** Trench
**
Domain and module applications：
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RSD131P10-VB is widely used in high voltage power management and switching power supplies (SMPS) for motor drives, load switches, and power conversion. Its high voltage capability and low on-resistance make it ideal for use in electric vehicles, industrial equipment, LED drives, and renewable energy systems such as solar inverters. This MOSFET can effectively improve system efficiency and reliability, meeting the power management needs of modern high-performance electronic devices.
RSD131P10-VB is widely used in high voltage power management and switching power supplies (SMPS) for motor drives, load switches, and power conversion. Its high voltage capability and low on-resistance make it ideal for use in electric vehicles, industrial equipment, LED drives, and renewable energy systems such as solar inverters. This MOSFET can effectively improve system efficiency and reliability, meeting the power management needs of modern high-performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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