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RSD131P10FRA-VB Product details
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Product Introduction
RSD131P10FRA-VB is a high-performance P-channel MOSFET in TO252 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is -100V, and it supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -2V, enabling effective switching at lower drive voltages. The on-resistance (RDS(ON)) is 120mΩ at VGS=4.5V and 100mΩ at VGS=10V, and the maximum leakage current (ID) can reach -16A. RSD131P10FRA-VB uses Trench technology, has superior conductivity and thermal management performance, and is widely used in various power supply and load control systems.
RSD131P10FRA-VB is a high-performance P-channel MOSFET in TO252 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is -100V, and it supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -2V, enabling effective switching at lower drive voltages. The on-resistance (RDS(ON)) is 120mΩ at VGS=4.5V and 100mΩ at VGS=10V, and the maximum leakage current (ID) can reach -16A. RSD131P10FRA-VB uses Trench technology, has superior conductivity and thermal management performance, and is widely used in various power supply and load control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: RSD131P10FRA-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -16A
- **Technology**: Trench technology
- **Model**: RSD131P10FRA-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -16A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules
RSD131P10FRA-VB has a wide range of applications in multiple fields and modules, including:
1. **Power management**: This MOSFET can achieve efficient energy conversion in switching power supplies and DC-DC converters, and is suitable for various power adapters and power modules.
2. **Motor control**: In the motor drive circuit, RSD131P10FRA-VB can effectively control the start and operation of the motor, suitable for electric vehicles, home appliances and automation equipment.
3. **LED drive**: This MOSFET can achieve efficient drive in LED lighting systems, ensure stable brightness of LEDs, and is widely used in commercial and home lighting solutions.
4. **Load switch**: RSD131P10FRA-VB can be used as a load switch, suitable for various portable devices and consumer electronics products, optimizing space usage and improving energy efficiency.
5. **Signal Switching**: In audio and video applications, as an efficient signal switch, this MOSFET can ensure high-quality signal transmission and is suitable for various electronic devices.
With its excellent electrical performance and reliability, RSD131P10FRA-VB is an ideal choice for modern high-efficiency power and load control applications, and can meet a variety of design needs.
RSD131P10FRA-VB has a wide range of applications in multiple fields and modules, including:
1. **Power management**: This MOSFET can achieve efficient energy conversion in switching power supplies and DC-DC converters, and is suitable for various power adapters and power modules.
2. **Motor control**: In the motor drive circuit, RSD131P10FRA-VB can effectively control the start and operation of the motor, suitable for electric vehicles, home appliances and automation equipment.
3. **LED drive**: This MOSFET can achieve efficient drive in LED lighting systems, ensure stable brightness of LEDs, and is widely used in commercial and home lighting solutions.
4. **Load switch**: RSD131P10FRA-VB can be used as a load switch, suitable for various portable devices and consumer electronics products, optimizing space usage and improving energy efficiency.
5. **Signal Switching**: In audio and video applications, as an efficient signal switch, this MOSFET can ensure high-quality signal transmission and is suitable for various electronic devices.
With its excellent electrical performance and reliability, RSD131P10FRA-VB is an ideal choice for modern high-efficiency power and load control applications, and can meet a variety of design needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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