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RSD046P05-VB Product details
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RSD046P05-VB Product Introduction
RSD046P05-VB is a high-performance P-channel MOSFET in TO252 package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of -60V and a maximum drain current (ID) of -30A, making it suitable for a variety of complex electrical environments. Its on-resistance (RDS(ON)) is 100mΩ at VGS=4.5V and 90mΩ at VGS=10V. Its excellent on-state performance enables it to significantly reduce power consumption and heat generation under high load conditions. RSD046P05-VB adopts advanced Trench technology, has good switching performance and thermal management capabilities, and is very suitable for a variety of power and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: RSD046P05-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 100mΩ@VGS=4.5V; 90mΩ@VGS=10V
- **Drain current (ID)**: -30A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: RSD046P05-VB is widely used in power management systems, especially in high-efficiency DC-DC converters and battery management systems. Its low conduction loss characteristics can improve the overall power efficiency and reduce heat generation, ensuring the reliability and stability of the system.
2. **Motor drive**: This MOSFET is suitable for motor control applications. It can provide a stable load current to ensure the efficient operation of the motor under different working conditions. It is widely used in industrial automation, robots and power tools.
3. **Load switch**: RSD046P05-VB can be used for load switch applications. Its high current carrying capacity and low on-resistance make it suitable for efficient power management and control in portable electronic devices and consumer electronics.
4. **LED drive**: In LED lighting applications, this device can effectively drive high-power LED lamps. With fast switching characteristics and low power consumption, it helps to improve the light efficiency and extend the service life of LED lamps.
In summary, RSD046P05-VB MOSFET has become an ideal choice for low voltage and high current applications due to its excellent performance and wide applicability.
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