RSD045P05-VB Product details
Product introduction:
RSD045P05-VB is a high-efficiency single P-channel MOSFET in TO252 package with -60V drain-source voltage (VDS) and -30A maximum drain current (ID). The device supports ±20V gate-source voltage (VGS) and threshold voltage (Vth) of -1.7V. The on-resistance (RDS(ON)) is 100mΩ at VGS=4.5V and 90mΩ at VGS=10V. This MOSFET is designed with Trench technology and is suitable for applications requiring high performance and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Model:** RSD045P05-VB
- **Package:** TO252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 100mΩ(VGS=4.5V)
- 90mΩ(VGS=10V)
- **Maximum leakage current (ID):** -30A
- **Technology:** Trench
Domain and module applications:
RSD045P05-VB is widely used in power management and switching power supplies (SMPS), especially in power conversion, load switching and motor drive. Due to its low on-resistance, this MOSFET performs well in electric vehicles, inverters, LED lighting and industrial control systems, which can effectively improve the energy efficiency and reliability of the system. In addition, its design is also suitable for high-density circuit boards and miniaturized electronic products, meeting the needs of modern equipment for high performance and low power consumption.
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