Product introduction:
RQW200N03-VB Product Introduction
RQW200N03-VB is a high-performance N-channel MOSFET in DFN8 (5x6) package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 30V and a drain current (ID) of up to 80A, enabling it to operate stably in a variety of harsh electrical environments. Its on-resistance (RDS(ON)) is 9mΩ@VGS=4.5V and 7mΩ@VGS=10V, respectively, ensuring significant reduction in power consumption and heat under high current conditions. RQW200N03-VB uses advanced Trench technology, providing fast switching capability and excellent thermal management performance, making it ideal for a variety of power and control applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: RQW200N03-VB
- **Package**: DFN8(5x6)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ@VGS=4.5V; 7mΩ@VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications:
Applicable fields and modules
1. **Power management**: RQW200N03-VB is widely used in power management systems, especially in DC-DC converters and battery management systems. The low conduction loss characteristics can effectively improve power efficiency, reduce heat and ensure system reliability.
2. **Motor drive**: This MOSFET is suitable for motor control applications. It can provide high current output to ensure efficient and stable operation of the motor, especially in industrial automation and robotics.
3. **LED drive**: In the field of LED lighting, RQW200N03-VB can be used to drive high-power LED lamps. Its fast switching capability and low on-resistance can improve the light efficiency and service life of the lamps and meet the needs of efficient lighting.
4. **Consumer electronics**: This device is also widely used in portable electronic devices such as mobile phones, tablets and other consumer products. It can efficiently control the power switch, extend the battery life and improve the overall performance.
In summary, RQW200N03-VB MOSFET is an ideal choice for low voltage and high current applications due to its excellent performance and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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