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RQK2001HQDQATL-E-VB Product details
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RQK2001HQDQATL-E-VB Product Introduction
The RQK2001HQDQATL-E-VB is a high-efficiency single N-channel MOSFET in a compact SOT23-3 package designed for high-voltage applications. The device has a maximum drain-source voltage of 200V, a maximum drain current of 0.6A, good switching performance and relatively low on-resistance. With its excellent performance, the RQK2001HQDQATL-E-VB is very suitable for power electronic systems that require high efficiency and miniaturized design, especially in switching power supplies and low-power applications.
The RQK2001HQDQATL-E-VB is a high-efficiency single N-channel MOSFET in a compact SOT23-3 package designed for high-voltage applications. The device has a maximum drain-source voltage of 200V, a maximum drain current of 0.6A, good switching performance and relatively low on-resistance. With its excellent performance, the RQK2001HQDQATL-E-VB is very suitable for power electronic systems that require high efficiency and miniaturized design, especially in switching power supplies and low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 2.5V | 0.6A | 1400mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 2.5V | 0.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 2.5V | 0.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Model**: RQK2001HQDQATL-E-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 1400mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.6A
- **Technology**: Trench
- **Model**: RQK2001HQDQATL-E-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 1400mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.6A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Switching power supply**: RQK2001HQDQATL-E-VB is commonly used in switching power supply design, which can efficiently convert electrical energy under high voltage conditions and reduce energy loss.
2. **LED driver**: In LED lighting applications, this MOSFET can provide stable current control to ensure the brightness and efficiency of the LED, and is suitable for small LED driver circuits.
3. **Portable electronic devices**: Due to its miniaturized design, this device is very suitable for power management modules in portable devices such as smartphones and tablets to help extend battery life.
4. **Battery management system**: RQK2001HQDQATL-E-VB can be used as a switching element in battery management and charging systems to ensure a safe and efficient charging process.
5. **Consumer electronics**: This MOSFET performs well in a variety of consumer electronics products and is suitable for low-power applications to help improve overall performance and reliability.
Through these application examples, RQK2001HQDQATL-E-VB demonstrates its wide applicability and importance in the field of high voltage and low power consumption power electronics.
1. **Switching power supply**: RQK2001HQDQATL-E-VB is commonly used in switching power supply design, which can efficiently convert electrical energy under high voltage conditions and reduce energy loss.
2. **LED driver**: In LED lighting applications, this MOSFET can provide stable current control to ensure the brightness and efficiency of the LED, and is suitable for small LED driver circuits.
3. **Portable electronic devices**: Due to its miniaturized design, this device is very suitable for power management modules in portable devices such as smartphones and tablets to help extend battery life.
4. **Battery management system**: RQK2001HQDQATL-E-VB can be used as a switching element in battery management and charging systems to ensure a safe and efficient charging process.
5. **Consumer electronics**: This MOSFET performs well in a variety of consumer electronics products and is suitable for low-power applications to help improve overall performance and reliability.
Through these application examples, RQK2001HQDQATL-E-VB demonstrates its wide applicability and importance in the field of high voltage and low power consumption power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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