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RQK0603CGDQSTL-E-VB Product details
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RQK0603CGDQSTL-E-VB Product Introduction
RQK0603CGDQSTL-E-VB is a high-performance N-Channel MOSFET in SOT89 package, designed for low voltage and high current applications. Its rated drain-source voltage (VDS) is 60V, suitable for stable operation in a variety of low voltage circuits. The on-resistance (RDS(ON)) of the device shows excellent performance at different gate-source voltages: 88mΩ at VGS=4.5V and 76mΩ at VGS=10V, which helps to effectively reduce power consumption and improve overall efficiency. The maximum drain current (ID) reaches 5.5A, ensuring reliability and performance in various application scenarios.
RQK0603CGDQSTL-E-VB is a high-performance N-Channel MOSFET in SOT89 package, designed for low voltage and high current applications. Its rated drain-source voltage (VDS) is 60V, suitable for stable operation in a variety of low voltage circuits. The on-resistance (RDS(ON)) of the device shows excellent performance at different gate-source voltages: 88mΩ at VGS=4.5V and 76mΩ at VGS=10V, which helps to effectively reduce power consumption and improve overall efficiency. The maximum drain current (ID) reaches 5.5A, ensuring reliability and performance in various application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description
- **Model**: RQK0603CGDQSTL-E-VB
- **Package**: SOT89
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ @ VGS=4.5V
- 76mΩ @ VGS=10V
- **Drain current (ID)**: 5.5A
- **Technology**: Trench
- **Model**: RQK0603CGDQSTL-E-VB
- **Package**: SOT89
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ @ VGS=4.5V
- 76mΩ @ VGS=10V
- **Drain current (ID)**: 5.5A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Low-power switching power supply (SMPS)**:
- RQK0603CGDQSTL-E-VB can be used as the main switching element in low-power switching power supplies to provide efficient energy conversion and ensure stable output of the system under different load conditions.
2. **Motor drive**:
- This MOSFET is suitable for small motor control and can efficiently drive DC motors. It is widely used in home appliances, toys and small automation equipment.
3. **LED drive circuit**:
- RQK0603CGDQSTL-E-VB performs well in LED drive applications, can provide stable current, ensure efficient lighting and long life of LEDs, and is suitable for various lighting systems and display devices.
4. **Battery management system (BMS)**:
- In the battery management system, this MOSFET can be used for battery charge and discharge control, improve system safety and energy utilization efficiency, and is widely used in portable devices and electric vehicles.
5. **Signal Switch**:
- Due to its low on-resistance and high efficiency performance, RQK0603CGDQSTL-E-VB is suitable for signal switch applications and can be used for signal transmission and control in various electronic devices.
Through these application examples, RQK0603CGDQSTL-E-VB shows its importance in low voltage and high power applications, and is an ideal choice in power electronics design.
1. **Low-power switching power supply (SMPS)**:
- RQK0603CGDQSTL-E-VB can be used as the main switching element in low-power switching power supplies to provide efficient energy conversion and ensure stable output of the system under different load conditions.
2. **Motor drive**:
- This MOSFET is suitable for small motor control and can efficiently drive DC motors. It is widely used in home appliances, toys and small automation equipment.
3. **LED drive circuit**:
- RQK0603CGDQSTL-E-VB performs well in LED drive applications, can provide stable current, ensure efficient lighting and long life of LEDs, and is suitable for various lighting systems and display devices.
4. **Battery management system (BMS)**:
- In the battery management system, this MOSFET can be used for battery charge and discharge control, improve system safety and energy utilization efficiency, and is widely used in portable devices and electric vehicles.
5. **Signal Switch**:
- Due to its low on-resistance and high efficiency performance, RQK0603CGDQSTL-E-VB is suitable for signal switch applications and can be used for signal transmission and control in various electronic devices.
Through these application examples, RQK0603CGDQSTL-E-VB shows its importance in low voltage and high power applications, and is an ideal choice in power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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