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RQK0302GGDQS-VB Product details
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RQK0302GGDQS-VB Product Introduction
RQK0302GGDQS-VB is a high-performance N-channel MOSFET in SOT89 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of 30V and a drain current (ID) of up to 6.8A, the device is suitable for stable operation in various harsh electrical environments. Its on-resistance (RDS(ON)) is 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V, ensuring low thermal loss under high current conditions. Using Trench technology, RQK0302GGDQS-VB excels in switching speed and thermal management, and can effectively improve the overall performance of the system.
RQK0302GGDQS-VB is a high-performance N-channel MOSFET in SOT89 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of 30V and a drain current (ID) of up to 6.8A, the device is suitable for stable operation in various harsh electrical environments. Its on-resistance (RDS(ON)) is 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V, ensuring low thermal loss under high current conditions. Using Trench technology, RQK0302GGDQS-VB excels in switching speed and thermal management, and can effectively improve the overall performance of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description
- **Model**: RQK0302GGDQS-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 30mΩ@VGS=2.5V; 22mΩ@VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology**: Trench
- **Model**: RQK0302GGDQS-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 30mΩ@VGS=2.5V; 22mΩ@VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: RQK0302GGDQS-VB is widely used in power management systems such as DC-DC converters and battery management systems. Its low conduction loss characteristics help improve power efficiency and reduce heat generation, thereby extending the service life of the device.
2. **Consumer electronics**: This MOSFET is very suitable for portable electronic devices and consumer products such as mobile phones, tablets and smart home devices, enabling efficient power switch control and stable current output.
3. **LED driver**: In the field of LED lighting, RQK0302GGDQS-VB can be used to drive high-power LED lamps, ensuring efficient current control and lower heat generation, thereby improving the light efficiency and service life of the lamps.
4. **Industrial control**: This MOSFET is also suitable for use in industrial control and automation systems for power management and switch control circuits to ensure reliability and long-term stability under high load conditions.
In summary, RQK0302GGDQS-VB MOSFET has become an ideal choice for low voltage and high current applications with its excellent performance and wide application applicability.
1. **Power management**: RQK0302GGDQS-VB is widely used in power management systems such as DC-DC converters and battery management systems. Its low conduction loss characteristics help improve power efficiency and reduce heat generation, thereby extending the service life of the device.
2. **Consumer electronics**: This MOSFET is very suitable for portable electronic devices and consumer products such as mobile phones, tablets and smart home devices, enabling efficient power switch control and stable current output.
3. **LED driver**: In the field of LED lighting, RQK0302GGDQS-VB can be used to drive high-power LED lamps, ensuring efficient current control and lower heat generation, thereby improving the light efficiency and service life of the lamps.
4. **Industrial control**: This MOSFET is also suitable for use in industrial control and automation systems for power management and switch control circuits to ensure reliability and long-term stability under high load conditions.
In summary, RQK0302GGDQS-VB MOSFET has become an ideal choice for low voltage and high current applications with its excellent performance and wide application applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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