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RQK0301FGDQS-VB Product details
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RQK0301FGDQS-VB is a high-efficiency single N-channel MOSFET in a SOT89 package with a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 6.8A. The device supports a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 30mΩ at VGS=2.5V and 22mΩ at VGS=4.5V. Designed based on Trench technology, this MOSFET performs well in low voltage and high current applications and is suitable for a variety of power management and switch control schemes.
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RQK0301FGDQS-VB is a high-efficiency single N-channel MOSFET in a SOT89 package with a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 6.8A. The device supports a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 30mΩ at VGS=2.5V and 22mΩ at VGS=4.5V. Designed based on Trench technology, this MOSFET performs well in low voltage and high current applications and is suitable for a variety of power management and switch control schemes.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
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- **Model:** RQK0301FGDQS-VB
- **Package:** SOT89
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 30mΩ（VGS=2.5V）
- 22mΩ（VGS=4.5V）
- **Maximum leakage current (ID):** 6.8A
- **Technology:** Trench
**
- **Model:** RQK0301FGDQS-VB
- **Package:** SOT89
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 30mΩ（VGS=2.5V）
- 22mΩ（VGS=4.5V）
- **Maximum leakage current (ID):** 6.8A
- **Technology:** Trench
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Domain and module applications：
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RQK0301FGDQS-VB is widely used in power management and switch control of portable electronic devices, especially for battery-driven products such as smart phones, tablets and wearable devices. Its low on-resistance and high current capability make it excellent in power conversion and power management applications, which can improve the energy efficiency of the system. In addition, this MOSFET can also be used in LED drive circuits, various motor controls and other fast switching power management modules to meet the needs of modern high-performance electronic products for miniaturization and high reliability.
RQK0301FGDQS-VB is widely used in power management and switch control of portable electronic devices, especially for battery-driven products such as smart phones, tablets and wearable devices. Its low on-resistance and high current capability make it excellent in power conversion and power management applications, which can improve the energy efficiency of the system. In addition, this MOSFET can also be used in LED drive circuits, various motor controls and other fast switching power management modules to meet the needs of modern high-performance electronic products for miniaturization and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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