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RQ1C075UN-VB Product details

Product introduction:

RQ1C075UN-VB Product Introduction

RQ1C075UN-VB is a high-performance N-channel MOSFET in a compact DFN8(3x3) package, designed for low voltage and high-efficiency applications. The MOSFET has a drain-source voltage (VDS) of up to 30V and supports a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 1.7V, ensuring effective switching at low voltages. The on-resistance (RDS(ON)) is 11mΩ at VGS=4.5V and 8mΩ at VGS=10V, and the drain current (ID) can reach a maximum of 13A. RQ1C075UN-VB uses Trench technology, has superior thermal management and electrical performance, and is very suitable for the needs of modern electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description

- **Model**: RQ1C075UN-VB
- **Package**: DFN8(3x3)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Drain current (ID)**: 13A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

RQ1C075UN-VB MOSFET is suitable for multiple fields and modules, including:

1. **Power management**: In high-efficiency switching power supplies, RQ1C075UN-VB can achieve fast switching, ensuring high efficiency and low energy consumption, and is widely used in consumer electronics and industrial equipment.
2. **Battery-powered devices**: In battery management systems, this MOSFET is used to control battery charging and discharging, improving overall energy efficiency and extending battery life.
3. **LED drive**: In LED lighting and drive circuits, this MOSFET can provide efficient switching control to ensure the brightness and stability of lighting.
4. **Motor control**: Suitable for small motor drive systems, effectively controlling the start and operation of motors, and is widely used in household appliances and robots.
5. **Signal switch**: In audio and data transmission, RQ1C075UN-VB can be used as a signal switch to ensure high-quality signal transmission.

With its compact design and excellent electrical performance, the RQ1C075UN-VB is an ideal choice for modern high-efficiency electronic devices and can meet a variety of application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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