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RP1E125XN-VB Product details
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Product Introduction
RP1E125XN-VB is a high-efficiency N-channel MOSFET in SOT89-6 package, designed for low voltage and medium power applications. Its VDS can reach up to 30V, suitable for a variety of power electronic devices. The device's VGS can withstand a maximum of ±20V, ensuring flexibility under various driving conditions. RDS(ON) performs well under different VGS, which are 27mΩ (at VGS=4.5V) and 23mΩ (at VGS=10V), respectively, supporting a maximum current of 6A and providing excellent conductivity.
RP1E125XN-VB is a high-efficiency N-channel MOSFET in SOT89-6 package, designed for low voltage and medium power applications. Its VDS can reach up to 30V, suitable for a variety of power electronic devices. The device's VGS can withstand a maximum of ±20V, ensuring flexibility under various driving conditions. RDS(ON) performs well under different VGS, which are 27mΩ (at VGS=4.5V) and 23mΩ (at VGS=10V), respectively, supporting a maximum current of 6A and providing excellent conductivity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | 30V | 1.7V | 6A | 23mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N |
Detailed parameter description
- **Model**: RP1E125XN-VB
- **Package**: SOT89-6
- **Configuration**: Single-N-Channel
- **VDS**: 30V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 27mΩ @ VGS=4.5V
- 23mΩ @ VGS=10V
- **ID**: 6A
- **Technology**: Trench
- **Model**: RP1E125XN-VB
- **Package**: SOT89-6
- **Configuration**: Single-N-Channel
- **VDS**: 30V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 27mΩ @ VGS=4.5V
- 23mΩ @ VGS=10V
- **ID**: 6A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Mobile Device Power Management**:
The RP1E125XN-VB can be widely used in power management modules in mobile phones, tablets and other portable electronic devices. Its small package and low on-resistance enable efficient power conversion in a limited space and improve energy utilization.
2. **LED Driver Circuit**:
This MOSFET is suitable for driver circuits in LED lighting applications to accurately control the current of LEDs. Its low on-resistance and fast switching characteristics improve the efficiency and performance of lighting equipment.
3. **Battery Management System**:
The RP1E125XN-VB is also very suitable for battery management systems, supporting fast charging and discharging processes. Its efficient conductivity and good heat dissipation characteristics ensure that energy loss is minimized during charging and discharging.
4. **Small DC-DC Converter**:
This device is suitable for use in small DC-DC converters to help achieve efficient voltage conversion. Due to its excellent conductivity, the RP1E125XN-VB can be used for power supply of various electronic devices.
With its excellent performance and wide range of applications, the RP1E125XN-VB is an ideal choice for low voltage medium power electronic devices.
1. **Mobile Device Power Management**:
The RP1E125XN-VB can be widely used in power management modules in mobile phones, tablets and other portable electronic devices. Its small package and low on-resistance enable efficient power conversion in a limited space and improve energy utilization.
2. **LED Driver Circuit**:
This MOSFET is suitable for driver circuits in LED lighting applications to accurately control the current of LEDs. Its low on-resistance and fast switching characteristics improve the efficiency and performance of lighting equipment.
3. **Battery Management System**:
The RP1E125XN-VB is also very suitable for battery management systems, supporting fast charging and discharging processes. Its efficient conductivity and good heat dissipation characteristics ensure that energy loss is minimized during charging and discharging.
4. **Small DC-DC Converter**:
This device is suitable for use in small DC-DC converters to help achieve efficient voltage conversion. Due to its excellent conductivity, the RP1E125XN-VB can be used for power supply of various electronic devices.
With its excellent performance and wide range of applications, the RP1E125XN-VB is an ideal choice for low voltage medium power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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