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RP1E090XN-VB Product details
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RP1E090XN-VB Product Introduction
RP1E090XN-VB is a high-performance N-Channel MOSFET in a SOT89-6 package, designed for low-voltage applications. Its rated drain-source voltage (VDS) is 30V, suitable for stable operation in a variety of low-voltage circuits. The on-resistance (RDS(ON)) of the device shows excellent performance at different gate-source voltages: 27mΩ at VGS=4.5V and 23mΩ at VGS=10V, which can effectively reduce energy loss and improve overall efficiency. The maximum drain current (ID) reaches 6A, ensuring reliability and performance in a variety of application scenarios.
RP1E090XN-VB is a high-performance N-Channel MOSFET in a SOT89-6 package, designed for low-voltage applications. Its rated drain-source voltage (VDS) is 30V, suitable for stable operation in a variety of low-voltage circuits. The on-resistance (RDS(ON)) of the device shows excellent performance at different gate-source voltages: 27mΩ at VGS=4.5V and 23mΩ at VGS=10V, which can effectively reduce energy loss and improve overall efficiency. The maximum drain current (ID) reaches 6A, ensuring reliability and performance in a variety of application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | 30V | 1.7V | 6A | 23mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N |
Detailed parameter description
- **Model**: RP1E090XN-VB
- **Package**: SOT89-6
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 27mΩ @ VGS=4.5V
- 23mΩ @ VGS=10V
- **Drain current (ID)**: 6A
- **Technology**: Trench
- **Model**: RP1E090XN-VB
- **Package**: SOT89-6
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 27mΩ @ VGS=4.5V
- 23mΩ @ VGS=10V
- **Drain current (ID)**: 6A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Low-power switching power supply (SMPS)**:
- RP1E090XN-VB can be used as the main switching element in low-power switching power supplies to provide efficient energy conversion and ensure stable output under different load conditions.
2. **Motor control**:
- This MOSFET is suitable for small motor drive systems and can efficiently control the start and operation of DC motors. It is widely used in home appliances and small automation equipment.
3. **LED drive circuit**:
- RP1E090XN-VB performs well in LED drive applications and can provide stable current to ensure efficient lighting and long life of LEDs. It is suitable for lighting systems and display screens.
4. **Battery management system (BMS)**:
- In battery management systems, this MOSFET can be used to control battery charge and discharge, improve system safety and energy utilization efficiency, and is widely used in portable devices and electric vehicles.
5. **Signal Switch**:
- Due to its low on-resistance and high efficiency performance, RP1E090XN-VB is suitable for signal switch applications, which can be used for signal transmission and control in various electronic devices.
Through these application examples, RP1E090XN-VB shows its importance in low voltage and high efficiency environments, making it an ideal choice in power electronics design.
1. **Low-power switching power supply (SMPS)**:
- RP1E090XN-VB can be used as the main switching element in low-power switching power supplies to provide efficient energy conversion and ensure stable output under different load conditions.
2. **Motor control**:
- This MOSFET is suitable for small motor drive systems and can efficiently control the start and operation of DC motors. It is widely used in home appliances and small automation equipment.
3. **LED drive circuit**:
- RP1E090XN-VB performs well in LED drive applications and can provide stable current to ensure efficient lighting and long life of LEDs. It is suitable for lighting systems and display screens.
4. **Battery management system (BMS)**:
- In battery management systems, this MOSFET can be used to control battery charge and discharge, improve system safety and energy utilization efficiency, and is widely used in portable devices and electric vehicles.
5. **Signal Switch**:
- Due to its low on-resistance and high efficiency performance, RP1E090XN-VB is suitable for signal switch applications, which can be used for signal transmission and control in various electronic devices.
Through these application examples, RP1E090XN-VB shows its importance in low voltage and high efficiency environments, making it an ideal choice in power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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