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RP1E075RP-VB Product details
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RP1E075RP-VB Product Introduction
RP1E075RP-VB is a high-performance P-channel MOSFET in a SOT89-6 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of -30V and a drain current (ID) of -6.1A, the device is suitable for stable operation in a variety of harsh electrical environments. Its on-resistance (RDS(ON)) is 26mΩ@VGS=4.5V and 22mΩ@VGS=10V, ensuring low thermal loss under high current conditions. Using Trench technology, the RP1E075RP-VB excels in switching speed and thermal management, and is suitable for a wide range of power and control applications.
RP1E075RP-VB is a high-performance P-channel MOSFET in a SOT89-6 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of -30V and a drain current (ID) of -6.1A, the device is suitable for stable operation in a variety of harsh electrical environments. Its on-resistance (RDS(ON)) is 26mΩ@VGS=4.5V and 22mΩ@VGS=10V, ensuring low thermal loss under high current conditions. Using Trench technology, the RP1E075RP-VB excels in switching speed and thermal management, and is suitable for a wide range of power and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-P | -30V | -1.7V | -6.1A | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-P | -30V | -1.7V | -6.1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-P | -30V | -1.7V | -6.1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-P |
Detailed parameter description
- **Model**: RP1E075RP-VB
- **Package**: SOT89-6
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 26mΩ@VGS=4.5V; 22mΩ@VGS=10V
- **Drain current (ID)**: -6.1A
- **Technology**: Trench
- **Model**: RP1E075RP-VB
- **Package**: SOT89-6
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 26mΩ@VGS=4.5V; 22mΩ@VGS=10V
- **Drain current (ID)**: -6.1A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: RP1E075RP-VB is widely used in power management systems such as battery-powered devices and regulated power supplies. Its low conduction loss characteristics can significantly improve power efficiency and extend the working time of equipment.
2. **Load switch**: This MOSFET is suitable for various load switch applications, such as realizing efficient power switch control in electronic devices, and can quickly respond to switching signals to ensure stable operation of the load.
3. **LED driver**: In the field of LED lighting, RP1E075RP-VB can be used to drive high-power LED lamps, providing reliable current control and lower heat generation, thereby improving the light efficiency and life of the lamps.
4. **Industrial control**: This MOSFET is also suitable for use in industrial automation systems for power management and control circuits to ensure reliability and long-term stability under high load conditions.
In summary, the RP1E075RP-VB MOSFET is an ideal choice for low voltage and high current applications with its excellent performance and wide application applicability.
1. **Power management**: RP1E075RP-VB is widely used in power management systems such as battery-powered devices and regulated power supplies. Its low conduction loss characteristics can significantly improve power efficiency and extend the working time of equipment.
2. **Load switch**: This MOSFET is suitable for various load switch applications, such as realizing efficient power switch control in electronic devices, and can quickly respond to switching signals to ensure stable operation of the load.
3. **LED driver**: In the field of LED lighting, RP1E075RP-VB can be used to drive high-power LED lamps, providing reliable current control and lower heat generation, thereby improving the light efficiency and life of the lamps.
4. **Industrial control**: This MOSFET is also suitable for use in industrial automation systems for power management and control circuits to ensure reliability and long-term stability under high load conditions.
In summary, the RP1E075RP-VB MOSFET is an ideal choice for low voltage and high current applications with its excellent performance and wide application applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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