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RP1E070XN-VB Product details
Back to previous pageProduct introduction：
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The RP1E070XN-VB is a high-efficiency single N-channel MOSFET in a SOT89-6 package with a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 6A. The device supports a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 27mΩ at VGS=4.5V and 23mΩ at VGS=10V. Designed based on Trench technology, this MOSFET performs well in low-voltage applications with excellent efficiency and reliability.
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The RP1E070XN-VB is a high-efficiency single N-channel MOSFET in a SOT89-6 package with a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 6A. The device supports a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 27mΩ at VGS=4.5V and 23mΩ at VGS=10V. Designed based on Trench technology, this MOSFET performs well in low-voltage applications with excellent efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | 30V | 1.7V | 6A | 23mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Single-N |
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- **Model:** RP1E070XN-VB
- **Package:** SOT89-6
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 27mΩ（VGS=4.5V）
- 23mΩ（VGS=10V）
- **Maximum leakage current (ID):** 6A
- **Technology:** Trench
**
- **Model:** RP1E070XN-VB
- **Package:** SOT89-6
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 27mΩ（VGS=4.5V）
- 23mΩ（VGS=10V）
- **Maximum leakage current (ID):** 6A
- **Technology:** Trench
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Domain and module applications：
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RP1E070XN-VB is widely used in power management and switch control of portable electronic devices, especially for battery-driven products such as smartphones, tablets and wearable devices. Its low on-resistance makes it very effective in power conversion and power management applications, which can improve the energy efficiency of the system. In addition, this MOSFET can also be used in LED drive circuits and other electronic applications that require fast switching operations, meeting the needs of modern high-performance electronic devices for miniaturization and high reliability.
RP1E070XN-VB is widely used in power management and switch control of portable electronic devices, especially for battery-driven products such as smartphones, tablets and wearable devices. Its low on-resistance makes it very effective in power conversion and power management applications, which can improve the energy efficiency of the system. In addition, this MOSFET can also be used in LED drive circuits and other electronic applications that require fast switching operations, meeting the needs of modern high-performance electronic devices for miniaturization and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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