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RK7002-VB Product details
Back to previous pageProduct introduction：
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RK7002-VB is a high-efficiency single N-channel MOSFET in SOT23-3 package with 60V drain-source voltage (VDS) and 0.3A maximum drain current (ID). The device supports ±20V gate-source voltage (VGS) and its threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) is 3100mΩ (VGS=4.5V) and 2800mΩ (VGS=10V) at different gate-source voltages. Based on Trench technology design, this MOSFET is suitable for low power and high efficiency applications.
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RK7002-VB is a high-efficiency single N-channel MOSFET in SOT23-3 package with 60V drain-source voltage (VDS) and 0.3A maximum drain current (ID). The device supports ±20V gate-source voltage (VGS) and its threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) is 3100mΩ (VGS=4.5V) and 2800mΩ (VGS=10V) at different gate-source voltages. Based on Trench technology design, this MOSFET is suitable for low power and high efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
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- **Model:** RK7002-VB
- **Package:** SOT23-3
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 3100mΩ（VGS=4.5V）
- 2800mΩ（VGS=10V）
- **Maximum leakage current (ID):** 0.3A
- **Technology:** Trench
**
- **Model:** RK7002-VB
- **Package:** SOT23-3
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 3100mΩ（VGS=4.5V）
- 2800mΩ（VGS=10V）
- **Maximum leakage current (ID):** 0.3A
- **Technology:** Trench
**
Domain and module applications：
：**
RK7002-VB is suitable for switching and control circuits of various low-power electronic devices, especially in battery-powered portable devices. Its low on-resistance and high efficiency make it very suitable for smart home devices, sensors and small motor drive applications. In addition, this MOSFET can also be used in LED drive circuits and other power management modules that require efficient switching operations, meeting the needs of modern electronic products for miniaturization and high performance.
RK7002-VB is suitable for switching and control circuits of various low-power electronic devices, especially in battery-powered portable devices. Its low on-resistance and high efficiency make it very suitable for smart home devices, sensors and small motor drive applications. In addition, this MOSFET can also be used in LED drive circuits and other power management modules that require efficient switching operations, meeting the needs of modern electronic products for miniaturization and high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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