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RJL6014DPP-VB Product details
Back to previous pageProduct introduction：
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RJL6014DPP-VB is a high-performance single N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 20A maximum drain current (ID). The device supports ±30V gate-source voltage (VGS), threshold voltage (Vth) of 3.5V, and on-resistance (RDS(ON)) of 320mΩ at VGS=10V. Based on planar technology design, this MOSFET performs well in high voltage and high current applications and is suitable for various power management and conversion systems.
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RJL6014DPP-VB is a high-performance single N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 20A maximum drain current (ID). The device supports ±30V gate-source voltage (VGS), threshold voltage (Vth) of 3.5V, and on-resistance (RDS(ON)) of 320mΩ at VGS=10V. Based on planar technology design, this MOSFET performs well in high voltage and high current applications and is suitable for various power management and conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
：**
- **Model:** RJL6014DPP-VB
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 320mΩ (VGS=10V)
- **Maximum drain current (ID):** 20A
- **Technology:** Planar technology
**
- **Model:** RJL6014DPP-VB
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 320mΩ (VGS=10V)
- **Maximum drain current (ID):** 20A
- **Technology:** Planar technology
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Domain and module applications：
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RJL6014DPP-VB is widely used in high-voltage power management and switching power supplies (SMPS), and is very suitable for renewable energy systems such as electric vehicle chargers and industrial inverters. Its high current capability and low on-resistance make it excellent in motor drive and power control modules, which can effectively improve the overall efficiency and reliability of the system. In addition, this MOSFET is also suitable for power conversion and management applications in various electronic devices, meeting the needs of modern high-performance electronic products for high efficiency and stability.
RJL6014DPP-VB is widely used in high-voltage power management and switching power supplies (SMPS), and is very suitable for renewable energy systems such as electric vehicle chargers and industrial inverters. Its high current capability and low on-resistance make it excellent in motor drive and power control modules, which can effectively improve the overall efficiency and reliability of the system. In addition, this MOSFET is also suitable for power conversion and management applications in various electronic devices, meeting the needs of modern high-performance electronic products for high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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