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RJL5014DPK-VB Product details
Back to previous pageProduct introduction：
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RJL5014DPK-VB is a high-performance single N-channel MOSFET in TO3P package with 600V drain-source voltage (VDS) and 15A maximum drain current (ID). The product supports ±30V gate-source voltage (VGS), threshold voltage (Vth) of 3.5V, and on-resistance (RDS(ON)) of 280mΩ at VGS=10V. Based on SJ_Multi-EPI technology, this MOSFET exhibits excellent performance in high voltage and high current applications, suitable for demanding power management systems.
**
RJL5014DPK-VB is a high-performance single N-channel MOSFET in TO3P package with 600V drain-source voltage (VDS) and 15A maximum drain current (ID). The product supports ±30V gate-source voltage (VGS), threshold voltage (Vth) of 3.5V, and on-resistance (RDS(ON)) of 280mΩ at VGS=10V. Based on SJ_Multi-EPI technology, this MOSFET exhibits excellent performance in high voltage and high current applications, suitable for demanding power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
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- **Model:** RJL5014DPK-VB
- **Package:** TO3P
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 600V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 280mΩ (VGS=10V)
- **Maximum drain current (ID):** 15A
- **Technology:** SJ_Multi-EPI
**
- **Model:** RJL5014DPK-VB
- **Package:** TO3P
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 600V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 280mΩ (VGS=10V)
- **Maximum drain current (ID):** 15A
- **Technology:** SJ_Multi-EPI
**
Domain and module applications：
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RJL5014DPK-VB is widely used in high-voltage power converters and switching power supplies (SMPS), and is particularly suitable for electric vehicle chargers and renewable energy systems (such as wind and solar inverters). Its high current capability and low on-resistance characteristics make it also excellent in motor drive and power management applications in industrial equipment. In addition, this MOSFET can be used in a variety of high-efficiency electronic devices and power control modules to help improve the overall efficiency and stability of the system and meet the needs of modern high-performance electronic products.
RJL5014DPK-VB is widely used in high-voltage power converters and switching power supplies (SMPS), and is particularly suitable for electric vehicle chargers and renewable energy systems (such as wind and solar inverters). Its high current capability and low on-resistance characteristics make it also excellent in motor drive and power management applications in industrial equipment. In addition, this MOSFET can be used in a variety of high-efficiency electronic devices and power control modules to help improve the overall efficiency and stability of the system and meet the needs of modern high-performance electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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