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RJK60S5DPQ-E0-T2-VB Product details
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RJK60S5DPQ-E0-T2-VB Product Introduction
RJK60S5DPQ-E0-T2-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high efficiency applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for operation under various harsh conditions. Its threshold voltage (Vth) is 3.5V and on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), making it excellent in power conversion and power management.
RJK60S5DPQ-E0-T2-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high efficiency applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for operation under various harsh conditions. Its threshold voltage (Vth) is 3.5V and on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), making it excellent in power conversion and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: RJK60S5DPQ-E0-T2-VB
- **Package**: TO247
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: RJK60S5DPQ-E0-T2-VB
- **Package**: TO247
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
The high voltage and high current characteristics of the RJK60S5DPQ-E0-T2-VB make it suitable for multiple applications, including:
1. **Switching Power Supply (SMPS)**: As a switching element, the RJK60S5DPQ-E0-T2-VB can improve power conversion efficiency and is suitable for power solutions for various industrial and consumer electronics products.
2. **Motor Drive**: In motor control systems, this MOSFET can achieve efficient current regulation and is suitable for power tools, home appliances and industrial equipment.
3. **Inverter**: In photovoltaic inverters and uninterruptible power supplies (UPS), the RJK60S5DPQ-E0-T2-VB can achieve efficient DC to AC power conversion, ensuring stable and reliable equipment.
4. **Power Management System**: This MOSFET is suitable for a variety of power management solutions, providing safety and high efficiency in high voltage environments to meet the stringent requirements of modern electronic devices.
Through these applications, RJK60S5DPQ-E0-T2-VB can support high-performance and high-reliability power electronic systems to adapt to diverse market needs.
The high voltage and high current characteristics of the RJK60S5DPQ-E0-T2-VB make it suitable for multiple applications, including:
1. **Switching Power Supply (SMPS)**: As a switching element, the RJK60S5DPQ-E0-T2-VB can improve power conversion efficiency and is suitable for power solutions for various industrial and consumer electronics products.
2. **Motor Drive**: In motor control systems, this MOSFET can achieve efficient current regulation and is suitable for power tools, home appliances and industrial equipment.
3. **Inverter**: In photovoltaic inverters and uninterruptible power supplies (UPS), the RJK60S5DPQ-E0-T2-VB can achieve efficient DC to AC power conversion, ensuring stable and reliable equipment.
4. **Power Management System**: This MOSFET is suitable for a variety of power management solutions, providing safety and high efficiency in high voltage environments to meet the stringent requirements of modern electronic devices.
Through these applications, RJK60S5DPQ-E0-T2-VB can support high-performance and high-reliability power electronic systems to adapt to diverse market needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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