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RJK60S4DPP-E0-VB Product details
Back to previous pageProduct introduction：
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RJK60S4DPP-E0-VB is a high-efficiency single N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 20A maximum drain current (ID). The device supports ±30V gate-source voltage (VGS), threshold voltage (Vth) of 3.5V, and on-resistance (RDS(ON)) of 160mΩ at VGS=10V. Based on SJ_Multi-EPI technology, this MOSFET exhibits excellent performance and efficient current handling capabilities in high voltage and high current applications.
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RJK60S4DPP-E0-VB is a high-efficiency single N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 20A maximum drain current (ID). The device supports ±30V gate-source voltage (VGS), threshold voltage (Vth) of 3.5V, and on-resistance (RDS(ON)) of 160mΩ at VGS=10V. Based on SJ_Multi-EPI technology, this MOSFET exhibits excellent performance and efficient current handling capabilities in high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Model:** RJK60S4DPP-E0-VB
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 160mΩ (VGS=10V)
- **Maximum drain current (ID):** 20A
- **Technology:** SJ_Multi-EPI
**
- **Model:** RJK60S4DPP-E0-VB
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 160mΩ (VGS=10V)
- **Maximum drain current (ID):** 20A
- **Technology:** SJ_Multi-EPI
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Domain and module applications：
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RJK60S4DPP-E0-VB is suitable for a wide range of high-voltage power management and conversion applications, including switch mode power supplies (SMPS), industrial power supplies, and electric vehicle chargers. Its high current capability and superior conduction characteristics make it very suitable for use in high-efficiency inverters, especially in renewable energy systems (such as solar inverters). In addition, this MOSFET is also suitable for motor drives and various power control modules, which can effectively improve the overall efficiency and reliability of the system and meet the needs of modern electronic equipment.
RJK60S4DPP-E0-VB is suitable for a wide range of high-voltage power management and conversion applications, including switch mode power supplies (SMPS), industrial power supplies, and electric vehicle chargers. Its high current capability and superior conduction characteristics make it very suitable for use in high-efficiency inverters, especially in renewable energy systems (such as solar inverters). In addition, this MOSFET is also suitable for motor drives and various power control modules, which can effectively improve the overall efficiency and reliability of the system and meet the needs of modern electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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