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RJK60S2DPD-VB Product details
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RJK60S2DPD-VB Product Introduction
RJK60S2DPD-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage applications. With a maximum drain-source voltage of 650V and a drain current capability of up to 9A, the device is suitable for power conversion, motor control and switching circuits that require high efficiency and reliability. Its low on-resistance characteristics enable it to work stably under high voltage conditions, meeting the requirements of modern power electronic systems.
RJK60S2DPD-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage applications. With a maximum drain-source voltage of 650V and a drain current capability of up to 9A, the device is suitable for power conversion, motor control and switching circuits that require high efficiency and reliability. Its low on-resistance characteristics enable it to work stably under high voltage conditions, meeting the requirements of modern power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RJK60S2DPD-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Model**: RJK60S2DPD-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**: RJK60S2DPD-VB is often used in switching power supply design. With its high withstand voltage and low on-resistance characteristics, it can effectively improve conversion efficiency and reduce heat loss.
2. **Motor drive**: In motor control systems, this MOSFET can be used as a switching device to support precise current control and fast switching operations, improving motor performance and response speed.
3. **Inverter**: This device can be used in photovoltaic inverters and other renewable energy applications. It can efficiently convert DC power to AC power to ensure system stability and reliability.
4. **High-frequency switching circuit**: RJK60S2DPD-VB is suitable for high-frequency switching circuits. Low on-resistance can reduce switching losses, making it perform well under high-frequency conditions.
5. **Battery Management System**: In battery charging and discharging control, this MOSFET can be used as a power switch to ensure that the battery works safely and efficiently, and improve the energy efficiency and life of the system.
Through these application examples, we can see the wide applicability and importance of RJK60S2DPD-VB in the field of high voltage power electronics.
1. **Switching power supply**: RJK60S2DPD-VB is often used in switching power supply design. With its high withstand voltage and low on-resistance characteristics, it can effectively improve conversion efficiency and reduce heat loss.
2. **Motor drive**: In motor control systems, this MOSFET can be used as a switching device to support precise current control and fast switching operations, improving motor performance and response speed.
3. **Inverter**: This device can be used in photovoltaic inverters and other renewable energy applications. It can efficiently convert DC power to AC power to ensure system stability and reliability.
4. **High-frequency switching circuit**: RJK60S2DPD-VB is suitable for high-frequency switching circuits. Low on-resistance can reduce switching losses, making it perform well under high-frequency conditions.
5. **Battery Management System**: In battery charging and discharging control, this MOSFET can be used as a power switch to ensure that the battery works safely and efficiently, and improve the energy efficiency and life of the system.
Through these application examples, we can see the wide applicability and importance of RJK60S2DPD-VB in the field of high voltage power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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