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RJK6014DPK-VB Product details
Back to previous pageProduct introduction：
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RJK6014DPK-VB is a high-efficiency single N-channel MOSFET in TO3P package with 600V drain-source voltage (VDS) and 11A maximum drain current (ID). The device supports ±30V gate-source voltage (VGS), threshold voltage (Vth) of 3.5V, and on-resistance (RDS(ON)) of 380mΩ at VGS=10V. Based on SJ_Multi-EPI technology, this MOSFET performs well in high voltage and high current applications with good thermal performance and efficiency.
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RJK6014DPK-VB is a high-efficiency single N-channel MOSFET in TO3P package with 600V drain-source voltage (VDS) and 11A maximum drain current (ID). The device supports ±30V gate-source voltage (VGS), threshold voltage (Vth) of 3.5V, and on-resistance (RDS(ON)) of 380mΩ at VGS=10V. Based on SJ_Multi-EPI technology, this MOSFET performs well in high voltage and high current applications with good thermal performance and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
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- **Model:** RJK6014DPK-VB
- **Package:** TO3P
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 600V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 380mΩ (VGS=10V)
- **Maximum drain current (ID):** 11A
- **Technology:** SJ_Multi-EPI
**
- **Model:** RJK6014DPK-VB
- **Package:** TO3P
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 600V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 380mΩ (VGS=10V)
- **Maximum drain current (ID):** 11A
- **Technology:** SJ_Multi-EPI
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Domain and module applications：
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RJK6014DPK-VB is widely used in high-voltage power supply systems and switching power supply (SMPS) designs, and is suitable for electric vehicle chargers, industrial power converters, and renewable energy inverters. Its high voltage characteristics make it an ideal choice for high-efficiency motor drive and power management modules, which can work stably in harsh environments and improve the overall performance and efficiency of the system.
RJK6014DPK-VB is widely used in high-voltage power supply systems and switching power supply (SMPS) designs, and is suitable for electric vehicle chargers, industrial power converters, and renewable energy inverters. Its high voltage characteristics make it an ideal choice for high-efficiency motor drive and power management modules, which can work stably in harsh environments and improve the overall performance and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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