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RJK6006DPD-VB Product details
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RJK6006DPD-VB Product Introduction
RJK6006DPD-VB is a high voltage N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. The device has a drain-source voltage (VDS) of up to 650V, making it suitable for a variety of high voltage circuits. RDS(ON) is 1000mΩ, ensuring effective energy management in high power applications. This MOSFET adopts SJ_Multi-EPI technology, with excellent switching performance and thermal stability, suitable for a wide range of power electronics applications.
RJK6006DPD-VB is a high voltage N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. The device has a drain-source voltage (VDS) of up to 650V, making it suitable for a variety of high voltage circuits. RDS(ON) is 1000mΩ, ensuring effective energy management in high power applications. This MOSFET adopts SJ_Multi-EPI technology, with excellent switching performance and thermal stability, suitable for a wide range of power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RJK6006DPD-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: RJK6006DPD-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**:
- RJK6006DPD-VB can be used in high-voltage switching power supplies to ensure efficient energy conversion and stable current output to meet the needs of a variety of loads.
2. **Motor Control**:
- In motor drive systems, this MOSFET can be used as a switching element to achieve efficient drive of DC and AC motors, providing good dynamic response and control performance.
3. **Battery Management System (BMS)**:
- RJK6006DPD-VB can be used in battery charge and discharge management of electric vehicles and energy storage systems to ensure safe and efficient energy flow and improve charging efficiency and safety.
4. **High-voltage DC Power Supply**:
- In high-voltage DC power supplies and inverters, this device can provide stable switching performance to ensure efficient transmission and conversion of electrical energy.
5. **Industrial Automation**:
- This MOSFET is used for power management and load control in industrial equipment to improve the controllability and stability of the system and adapt to various high-power applications.
Through these application examples, RJK6006DPD-VB shows its importance in the high voltage and medium power fields and is an ideal choice in power electronics design.
1. **Switching Power Supply (SMPS)**:
- RJK6006DPD-VB can be used in high-voltage switching power supplies to ensure efficient energy conversion and stable current output to meet the needs of a variety of loads.
2. **Motor Control**:
- In motor drive systems, this MOSFET can be used as a switching element to achieve efficient drive of DC and AC motors, providing good dynamic response and control performance.
3. **Battery Management System (BMS)**:
- RJK6006DPD-VB can be used in battery charge and discharge management of electric vehicles and energy storage systems to ensure safe and efficient energy flow and improve charging efficiency and safety.
4. **High-voltage DC Power Supply**:
- In high-voltage DC power supplies and inverters, this device can provide stable switching performance to ensure efficient transmission and conversion of electrical energy.
5. **Industrial Automation**:
- This MOSFET is used for power management and load control in industrial equipment to improve the controllability and stability of the system and adapt to various high-power applications.
Through these application examples, RJK6006DPD-VB shows its importance in the high voltage and medium power fields and is an ideal choice in power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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