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RJK5035DPP-E0-VB Product details
Back to previous pageProduct introduction：
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RJK5035DPP-E0-VB is a high-performance single N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 10A maximum drain current (ID). Its gate-source voltage (VGS) can reach ±30V, threshold voltage (Vth) is 3.5V, and on-resistance (RDS(ON)) is 830mΩ at VGS=10V. The product is designed based on planar technology, providing good thermal performance and reliability, suitable for a variety of high voltage applications.
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RJK5035DPP-E0-VB is a high-performance single N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 10A maximum drain current (ID). Its gate-source voltage (VGS) can reach ±30V, threshold voltage (Vth) is 3.5V, and on-resistance (RDS(ON)) is 830mΩ at VGS=10V. The product is designed based on planar technology, providing good thermal performance and reliability, suitable for a variety of high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
：**
- **Model:** RJK5035DPP-E0-VB
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 830mΩ (VGS=10V)
- **Maximum drain current (ID):** 10A
- **Technology:** Planar technology
**
- **Model:** RJK5035DPP-E0-VB
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 830mΩ (VGS=10V)
- **Maximum drain current (ID):** 10A
- **Technology:** Planar technology
**
Domain and module applications：
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RJK5035DPP-E0-VB is widely used in high-voltage power management and conversion fields, such as switching power supplies (SMPS) and industrial power supplies. Due to its superior voltage and current specifications, this product is very suitable for renewable energy systems such as electric vehicle (EV) chargers and solar inverters. In addition, in high-power motor drives and power transmission modules, this MOSFET can effectively improve the efficiency and reliability of the system, meeting the needs of modern electronic equipment for high performance and high reliability.
RJK5035DPP-E0-VB is widely used in high-voltage power management and conversion fields, such as switching power supplies (SMPS) and industrial power supplies. Due to its superior voltage and current specifications, this product is very suitable for renewable energy systems such as electric vehicle (EV) chargers and solar inverters. In addition, in high-power motor drives and power transmission modules, this MOSFET can effectively improve the efficiency and reliability of the system, meeting the needs of modern electronic equipment for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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