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RJK5030DPD-VB Product details
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RJK5030DPD-VB Product Introduction
RJK5030DPD-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, making it stable in harsh environments. Its threshold voltage (Vth) is 3.5V and on-resistance (RDS(ON)) is 1000mΩ (at VGS=10V), making it suitable for high-efficiency applications such as power conversion and motor drive.
RJK5030DPD-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, making it stable in harsh environments. Its threshold voltage (Vth) is 3.5V and on-resistance (RDS(ON)) is 1000mΩ (at VGS=10V), making it suitable for high-efficiency applications such as power conversion and motor drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RJK5030DPD-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: RJK5030DPD-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
The high voltage and moderate current capabilities of the RJK5030DPD-VB make it suitable for a variety of applications, including:
1. **Switching Power Supply (SMPS)**: This MOSFET can be used as a switching element to improve power conversion efficiency, especially for applications that require high voltage output, such as server power supplies and industrial power supplies.
2. **Motor Drive**: In motor control circuits, the RJK5030DPD-VB can achieve efficient current control, especially in power tools and home appliances.
3. **Inverter**: It can be used in solar inverters and uninterruptible power supply (UPS) systems to support efficient DC to AC conversion and ensure stable operation of equipment.
4. **Power Management System**: This MOSFET is suitable for a variety of power management solutions to ensure safety and reliability in high voltage environments.
Through these applications, RJK5030DPD-VB can meet the needs of high performance and high reliability and adapt to the ever-evolving power electronics market.
The high voltage and moderate current capabilities of the RJK5030DPD-VB make it suitable for a variety of applications, including:
1. **Switching Power Supply (SMPS)**: This MOSFET can be used as a switching element to improve power conversion efficiency, especially for applications that require high voltage output, such as server power supplies and industrial power supplies.
2. **Motor Drive**: In motor control circuits, the RJK5030DPD-VB can achieve efficient current control, especially in power tools and home appliances.
3. **Inverter**: It can be used in solar inverters and uninterruptible power supply (UPS) systems to support efficient DC to AC conversion and ensure stable operation of equipment.
4. **Power Management System**: This MOSFET is suitable for a variety of power management solutions to ensure safety and reliability in high voltage environments.
Through these applications, RJK5030DPD-VB can meet the needs of high performance and high reliability and adapt to the ever-evolving power electronics market.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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