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RJK5013DPK-VB Product details
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RJK5013DPK-VB Product Introduction
RJK5013DPK-VB is a high-performance N-Channel MOSFET in TO3P package for high voltage applications. Its rated drain-source voltage (VDS) is 600V, enabling it to operate stably in demanding electrical environments. With low on-resistance (RDS(ON)) and moderate leakage current (ID), the device is suitable for high-power switching and power management systems.
RJK5013DPK-VB is a high-performance N-Channel MOSFET in TO3P package for high voltage applications. Its rated drain-source voltage (VDS) is 600V, enabling it to operate stably in demanding electrical environments. With low on-resistance (RDS(ON)) and moderate leakage current (ID), the device is suitable for high-power switching and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: RJK5013DPK-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: RJK5013DPK-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power converter**:
- In a switch mode power supply (SMPS), the RJK5013DPK-VB can be used as the main switching element to provide efficient power conversion, thereby improving system efficiency and reducing heat generation.
2. **Motor drive**:
- This MOSFET can be used in motor drive circuits, especially in high voltage and high frequency applications, to provide reliable switching performance to ensure smooth operation of the motor.
3. **Industrial automation**:
- In industrial equipment, the device can be used to control high power loads such as heating elements and pumps, enhancing the controllability and response speed of the system.
4. **New energy system**:
- The RJK5013DPK-VB is suitable for photovoltaic inverters and wind energy conversion systems, which can effectively manage high voltage DC from renewable energy and convert it into stable AC.
5. **Battery Management System (BMS)**:
- In electric vehicles and energy storage systems, this MOSFET can be used for battery charge and discharge control to ensure safe and efficient management of battery energy flow.
Through the above application examples, RJK5013DPK-VB has demonstrated its excellent performance in a variety of high-voltage and high-power environments, and is an indispensable and important component in the field of power electronics.
1. **Power converter**:
- In a switch mode power supply (SMPS), the RJK5013DPK-VB can be used as the main switching element to provide efficient power conversion, thereby improving system efficiency and reducing heat generation.
2. **Motor drive**:
- This MOSFET can be used in motor drive circuits, especially in high voltage and high frequency applications, to provide reliable switching performance to ensure smooth operation of the motor.
3. **Industrial automation**:
- In industrial equipment, the device can be used to control high power loads such as heating elements and pumps, enhancing the controllability and response speed of the system.
4. **New energy system**:
- The RJK5013DPK-VB is suitable for photovoltaic inverters and wind energy conversion systems, which can effectively manage high voltage DC from renewable energy and convert it into stable AC.
5. **Battery Management System (BMS)**:
- In electric vehicles and energy storage systems, this MOSFET can be used for battery charge and discharge control to ensure safe and efficient management of battery energy flow.
Through the above application examples, RJK5013DPK-VB has demonstrated its excellent performance in a variety of high-voltage and high-power environments, and is an indispensable and important component in the field of power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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