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RJK5012DPP-E0T2-VB Product details
Back to previous pageProduct introduction：
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RJK5012DPP-E0T2-VB is a single N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 12A maximum drain current (ID). Its gate-source voltage (VGS) can reach ±30V, threshold voltage (Vth) is 3.5V, and RDS(ON) is 680mΩ at VGS=10V. This product adopts planar technology, with high performance and reliability, suitable for high voltage and high current applications.
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RJK5012DPP-E0T2-VB is a single N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 12A maximum drain current (ID). Its gate-source voltage (VGS) can reach ±30V, threshold voltage (Vth) is 3.5V, and RDS(ON) is 680mΩ at VGS=10V. This product adopts planar technology, with high performance and reliability, suitable for high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Model:** RJK5012DPP-E0T2-VB
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 680mΩ (VGS=10V)
- **Maximum drain current (ID):** 12A
- **Technology:** Planar technology
**
- **Model:** RJK5012DPP-E0T2-VB
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 680mΩ (VGS=10V)
- **Maximum drain current (ID):** 12A
- **Technology:** Planar technology
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Domain and module applications：
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RJK5012DPP-E0T2-VB is widely used in power management and converter design, such as switching power supplies (SMPS) and inverters. Due to its high voltage characteristics, it is particularly suitable for electric vehicle (EV) chargers and renewable energy systems (such as solar inverters). In addition, it is suitable for drive circuits in industrial equipment that require high efficiency and reliability, improving the overall performance and stability of the system.
RJK5012DPP-E0T2-VB is widely used in power management and converter design, such as switching power supplies (SMPS) and inverters. Due to its high voltage characteristics, it is particularly suitable for electric vehicle (EV) chargers and renewable energy systems (such as solar inverters). In addition, it is suitable for drive circuits in industrial equipment that require high efficiency and reliability, improving the overall performance and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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