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RJK5012DPE-00-J3-VB Product details
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Product Introduction
RJK5012DPE-00-J3-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high efficiency switching applications. With a drain-source voltage (VDS) up to 650V and a maximum drain current (ID) of 12A, it is suitable for a variety of power management and converter applications. Its low on-resistance (RDS(ON)) is only 800mΩ at VGS=10V, which enables it to perform well during switching, thereby reducing power consumption and improving overall efficiency. The MOSFET adopts planar technology, ensuring reliable performance and good thermal stability.
RJK5012DPE-00-J3-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high efficiency switching applications. With a drain-source voltage (VDS) up to 650V and a maximum drain current (ID) of 12A, it is suitable for a variety of power management and converter applications. Its low on-resistance (RDS(ON)) is only 800mΩ at VGS=10V, which enables it to perform well during switching, thereby reducing power consumption and improving overall efficiency. The MOSFET adopts planar technology, ensuring reliable performance and good thermal stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 12A | 800mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RJK5012DPE-00-J3-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 800mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 12A
- **Technology**: Planar technology
- **Model**: RJK5012DPE-00-J3-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 800mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 12A
- **Technology**: Planar technology
Domain and module applications：
Application fields and modules
RJK5012DPE-00-J3-VB is suitable for multiple fields and modules, mainly including:
1. **Switching power supply**: In switching power supply design, this MOSFET can be used for high voltage conversion, providing high-efficiency power conversion and reducing energy loss.
2. **Motor drive**: In motor control systems, it can effectively drive high-voltage DC motors to ensure stable performance and response speed.
3. **Battery management system**: In battery charging and management applications, RJK5012DPE can be used for overvoltage protection and power switching to ensure safety and reliability.
4. **Industrial equipment**: Widely used in industrial control and automation equipment, supporting high-voltage operation, enhancing the durability and efficiency of equipment.
5. **Consumer electronics**: In some high-power consumer electronics products, this MOSFET can be used in power modules and charging circuits to provide efficient power management.
Through these application examples, we can see that the flexibility and efficiency of RJK5012DPE-00-J3-VB make it an indispensable component in modern electronic design.
RJK5012DPE-00-J3-VB is suitable for multiple fields and modules, mainly including:
1. **Switching power supply**: In switching power supply design, this MOSFET can be used for high voltage conversion, providing high-efficiency power conversion and reducing energy loss.
2. **Motor drive**: In motor control systems, it can effectively drive high-voltage DC motors to ensure stable performance and response speed.
3. **Battery management system**: In battery charging and management applications, RJK5012DPE can be used for overvoltage protection and power switching to ensure safety and reliability.
4. **Industrial equipment**: Widely used in industrial control and automation equipment, supporting high-voltage operation, enhancing the durability and efficiency of equipment.
5. **Consumer electronics**: In some high-power consumer electronics products, this MOSFET can be used in power modules and charging circuits to provide efficient power management.
Through these application examples, we can see that the flexibility and efficiency of RJK5012DPE-00-J3-VB make it an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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