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RJK4532DPD-VB Product details
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Product Introduction
RJK4532DPD-VB is a high voltage single N-channel MOSFET packaged in TO252. The device is designed for high voltage applications and has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) tolerance of 30V. It uses SJ_Multi-EPI technology, has excellent conduction performance and thermal stability, and is suitable for use in power management systems that require high efficiency and high reliability.
RJK4532DPD-VB is a high voltage single N-channel MOSFET packaged in TO252. The device is designed for high voltage applications and has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) tolerance of 30V. It uses SJ_Multi-EPI technology, has excellent conduction performance and thermal stability, and is suitable for use in power management systems that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RJK4532DPD-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (at VGS=10V)
- **Continuous leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Model**: RJK4532DPD-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (at VGS=10V)
- **Continuous leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
RJK4532DPD-VB MOSFET is widely used in many fields, here are some specific examples:
1. **Power converter**: In the switching power supply (SMPS), RJK4532DPD-VB can be used as the main switching element to provide efficient energy conversion, reduce energy loss, and improve the efficiency of the overall system.
2. **Electric vehicle**: In the drive control system of electric vehicles, RJK4532DPD-VB can handle high voltage power supply, control the performance and efficiency of motor drive, and ensure the stable operation of the vehicle under different working conditions.
3. **Industrial automation**: In industrial equipment, this MOSFET can be used for motor control and load drive, providing fast switching response and high load bearing capacity, suitable for use in harsh working environments.
4. **Solar Inverter**: In solar energy systems, the RJK4532DPD-VB can be used in inverter circuits to convert solar energy into usable electrical energy, helping to improve the overall efficiency and reliability of the system.
These applications demonstrate the critical role of the RJK4532DPD-VB in modern electronic devices, especially in high voltage and high-efficiency power management requirements.
RJK4532DPD-VB MOSFET is widely used in many fields, here are some specific examples:
1. **Power converter**: In the switching power supply (SMPS), RJK4532DPD-VB can be used as the main switching element to provide efficient energy conversion, reduce energy loss, and improve the efficiency of the overall system.
2. **Electric vehicle**: In the drive control system of electric vehicles, RJK4532DPD-VB can handle high voltage power supply, control the performance and efficiency of motor drive, and ensure the stable operation of the vehicle under different working conditions.
3. **Industrial automation**: In industrial equipment, this MOSFET can be used for motor control and load drive, providing fast switching response and high load bearing capacity, suitable for use in harsh working environments.
4. **Solar Inverter**: In solar energy systems, the RJK4532DPD-VB can be used in inverter circuits to convert solar energy into usable electrical energy, helping to improve the overall efficiency and reliability of the system.
These applications demonstrate the critical role of the RJK4532DPD-VB in modern electronic devices, especially in high voltage and high-efficiency power management requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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