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RJK1529DPK-VB Product details
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Product Introduction
RJK1529DPK-VB is a high-performance N-channel MOSFET in TO3P package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 150V and can support a drain current (ID) of up to 90A, which performs well in power management and switching applications. The on-resistance (RDS(ON)) of RJK1529DPK is 17mΩ at VGS = 10V, ensuring effective reduction of energy consumption during switching, and is suitable for application scenarios that require high efficiency and voltage resistance design.
RJK1529DPK-VB is a high-performance N-channel MOSFET in TO3P package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 150V and can support a drain current (ID) of up to 90A, which performs well in power management and switching applications. The on-resistance (RDS(ON)) of RJK1529DPK is 17mΩ at VGS = 10V, ensuring effective reduction of energy consumption during switching, and is suitable for application scenarios that require high efficiency and voltage resistance design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | 17mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: RJK1529DPK-VB
- **Package**: TO3P
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 17mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
- **Model**: RJK1529DPK-VB
- **Package**: TO3P
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 17mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
RJK1529DPK-VB can be widely used in multiple fields and modules, including:
1. **High-efficiency switching power supply**: Due to its high voltage and low on-resistance characteristics, this MOSFET is very suitable for DC-DC converter and switching power supply design, which can significantly improve energy efficiency, reduce energy loss, and reduce heat generation.
2. **Motor control**: In motor drive applications, RJK1529DPK-VB can support the drive of high-power DC motors and brushless motors, ensuring stable current and fast response, and improving system performance.
3. **Battery management system**: This MOSFET performs well in battery charging and discharging management, which can effectively control the charging process, ensure the safety of the battery, and extend its service life.
4. **LED lighting**: The RJK1529DPK-VB's efficient switching characteristics make it very suitable for LED lighting drive circuits, meeting the driving requirements of high-brightness LEDs while maintaining low power consumption and high efficiency.
5. **Consumer electronics**: In smartphones, tablets and other consumer electronics, this MOSFET can be used in power management modules to help improve energy efficiency and extend battery life to meet the needs of modern miniaturized designs.
With its excellent performance and versatility, the RJK1529DPK-VB is an indispensable component in modern electronic devices.
RJK1529DPK-VB can be widely used in multiple fields and modules, including:
1. **High-efficiency switching power supply**: Due to its high voltage and low on-resistance characteristics, this MOSFET is very suitable for DC-DC converter and switching power supply design, which can significantly improve energy efficiency, reduce energy loss, and reduce heat generation.
2. **Motor control**: In motor drive applications, RJK1529DPK-VB can support the drive of high-power DC motors and brushless motors, ensuring stable current and fast response, and improving system performance.
3. **Battery management system**: This MOSFET performs well in battery charging and discharging management, which can effectively control the charging process, ensure the safety of the battery, and extend its service life.
4. **LED lighting**: The RJK1529DPK-VB's efficient switching characteristics make it very suitable for LED lighting drive circuits, meeting the driving requirements of high-brightness LEDs while maintaining low power consumption and high efficiency.
5. **Consumer electronics**: In smartphones, tablets and other consumer electronics, this MOSFET can be used in power management modules to help improve energy efficiency and extend battery life to meet the needs of modern miniaturized designs.
With its excellent performance and versatility, the RJK1529DPK-VB is an indispensable component in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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