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RJK0631JPD-00-J3-VB Product details
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Product Introduction
RJK0631JPD-00-J3-VB is a high-performance N-channel MOSFET in TO252 package, designed for applications requiring high voltage and high current. The device has a maximum drain-source voltage (VDS) of 60V and can support a drain current (ID) of up to 58A, making it an excellent performer in power management and switching applications. The on-resistance (RDS(ON)) of RJK0631JPD is as low as 10mΩ at VGS = 10V, ensuring a significant reduction in energy loss during the switching process, making it suitable for high-efficiency applications.
RJK0631JPD-00-J3-VB is a high-performance N-channel MOSFET in TO252 package, designed for applications requiring high voltage and high current. The device has a maximum drain-source voltage (VDS) of 60V and can support a drain current (ID) of up to 58A, making it an excellent performer in power management and switching applications. The on-resistance (RDS(ON)) of RJK0631JPD is as low as 10mΩ at VGS = 10V, ensuring a significant reduction in energy loss during the switching process, making it suitable for high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RJK0631JPD-00-J3-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ (at VGS = 4.5V)
- 10mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench technology
- **Model**: RJK0631JPD-00-J3-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ (at VGS = 4.5V)
- 10mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
RJK0631JPD-00-J3-VB is suitable for multiple fields and modules, including:
1. **Power conversion**: Due to its high voltage and high current characteristics, this MOSFET is very suitable for switching power supply designs such as DC-DC converters and power adapters, which can effectively improve energy efficiency and reduce energy loss.
2. **Motor control**: In motor drive applications, RJK0631JPD-00-J3-VB can support the drive of high-power motors, ensuring efficient current control and fast response time.
3. **Battery management system**: This MOSFET performs well during battery charging and discharging, can effectively control the charging process, ensure system safety, and extend the battery life.
4. **LED drive**: RJK0631JPD-00-J3-VB is also very suitable for LED lighting drive circuits, which can meet the driving requirements of high-brightness LEDs while maintaining low power consumption and high efficiency.
5. **Consumer Electronics**: In consumer electronics such as smartphones and tablets, RJK0631JPD-00-J3-VB can be used in power management modules to help improve energy efficiency and extend battery life.
With its excellent performance and versatility, RJK0631JPD-00-J3-VB is an indispensable and important part of modern electronic devices.
RJK0631JPD-00-J3-VB is suitable for multiple fields and modules, including:
1. **Power conversion**: Due to its high voltage and high current characteristics, this MOSFET is very suitable for switching power supply designs such as DC-DC converters and power adapters, which can effectively improve energy efficiency and reduce energy loss.
2. **Motor control**: In motor drive applications, RJK0631JPD-00-J3-VB can support the drive of high-power motors, ensuring efficient current control and fast response time.
3. **Battery management system**: This MOSFET performs well during battery charging and discharging, can effectively control the charging process, ensure system safety, and extend the battery life.
4. **LED drive**: RJK0631JPD-00-J3-VB is also very suitable for LED lighting drive circuits, which can meet the driving requirements of high-brightness LEDs while maintaining low power consumption and high efficiency.
5. **Consumer Electronics**: In consumer electronics such as smartphones and tablets, RJK0631JPD-00-J3-VB can be used in power management modules to help improve energy efficiency and extend battery life.
With its excellent performance and versatility, RJK0631JPD-00-J3-VB is an indispensable and important part of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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